Article
Chemistry, Physical
E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, N. B. Smirnov, A. A. Vasilev, A. I. Kochkova, P. S. Vergeles, E. E. Yakimov, A. V. Chernykh, Minghan Xian, F. Ren, S. J. Pearton
Summary: Lightly n-type doped Ga2O3 layers grown by Halide Vapor Phase Epitaxy (HVPE) on bulk n(+)-Ga2O3 substrates were treated with fast reactor neutrons, 20 MeV protons, or high ion density Ar plasma, leading to an increase in deep acceptors concentration. This resulted in a significant enhancement of photocurrent and EBIC current collection efficiency in Schottky diodes on the layers, potentially improving the photosensitivity of Ga2O3-based solar-blind photodetectors.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Physical
Kun Zhang, Zongwei Xu, Junlei Zhao, Hong Wang, Jianmin Hao, Shengnan Zhang, Hongjuan Cheng, Bing Dong
Summary: This study successfully synthesized β-Ga2O3 single crystal using the edge-defined film-fed growth method, and investigated its anisotropic structural and vibrational properties through Raman spectroscopy. The experimental results at different excitation wavelengths showed pronounced periodic variations and differences, and were also affected by the Miller index.
APPLIED SURFACE SCIENCE
(2022)
Review
Crystallography
Nethala Manikanthababu, Hardhyan Sheoran, Pradeep Siddham, Rajendra Singh
Summary: This review investigates the effects of radiation on beta-Ga2O3 material and devices and explores its potential applications in power electronics. The study summarizes various studies on radiation-induced effects on the structure and performance of beta-Ga2O3 devices. It also highlights the importance of understanding pre-existing defects and radiation-induced defects in device performance. The results suggest that beta-Ga2O3-based devices could be suitable for space or high-radiation terrestrial applications.
Article
Nanoscience & Nanotechnology
Ping-Feng Chi, Feng-Wu Lin, Ming-Lun Lee, Jinn-Kong Sheu
Summary: This article demonstrates solar-blind photodetectors composed of Ga2O3/p-GaN bipolar heterojunctions formed through thermal oxidation and silicon ion implantation processes. The experimental results show that the thermal oxidation process converts p-GaN into semi-insulating β-Ga2O3 films, while silicon ion implantation transforms the insulating properties into n-type β-Ga2O3 with low resistivity and high electron concentration. The fabricated PDs exhibit high photoresponses in the solar-blind band.
Article
Materials Science, Multidisciplinary
Hongbin Wang, Jiangang Ma, He Chen, Longpu Wang, Peng Li, Yichun Liu
Summary: In this study, self-powered solar-blind ultraviolet (UV) photodetectors (PDs) based on Ga2O3/ZnO:V heterojunction were fabricated using the pulsed laser deposition method. The photoresponse behaviors of the Ga2O3/ZnO:V PDs can be controlled by the induced ferroelectric polarization field in ZnO:V. The improved performance of the Ga2O3/ZnO:V PD can be attributed to the increase in the built-in electric field and the widening of the depletion region under the influence of the depolarization field, which benefits the separation and transport of photogenerated carriers at the heterojunction interface.
MATERIALS TODAY PHYSICS
(2023)
Article
Chemistry, Physical
Xiaobin Zou, Dongyu Xie, Yong Sun, Chengxin Wang
Summary: High-quality β-Ga2O3 nanobelts with ultra-thin thickness and length up to several hundred micrometers were successfully synthesized through a catalyst-free chemical vapor deposition method using β-Ga2O3 nanowires as mediators. The resulting microdevice exhibited superior optoelectric properties, including ultra-low dark current, high responsivity, and high spectral selectivity under low voltage. Furthermore, the performance of the device remained robust at elevated temperatures above 573 K, indicating its potential for low-voltage driven deep ultraviolet photodetectors with good sensitivity and stability in harsh environments.
Review
Chemistry, Multidisciplinary
Zhu Jin, Yingying Liu, Ning Xia, Xiangwei Guo, Zijian Hong, Hui Zhang, Deren Yang
Summary: This review article summarizes recent advances in wet etching of β-Ga2O3 substrates, aiming to comprehensively understand the etching behavior and mechanism. Wet etching is classified into conventional and unconventional types, each with key parameters controlling etching kinetics discussed and examples highlighted. The review intends to provide guidance on designing appropriate etching strategies for various purposes and applications.
Article
Materials Science, Multidisciplinary
Guowei Li, Kun Zhang, Yutong Wu, Xi Zhu, Xie Fu, Liang Wang, Shuanglong Feng, Wenqiang Lu
Summary: Ultrafine beta-Ga2O3 nanowires were synthesized and used as the interlayer in a self-powered solar-blind photodetector. The Ga2O3 nanowires served as vital spectral-selective materials for the solar-blind band. The device incorporating a cluster of Ga2O3 nanowires exhibited a responsivity 44 times greater than that of the PEDOT:PSS/Si heterojunction device at a wavelength of 250 nm.
Article
Materials Science, Multidisciplinary
Ymir K. Frodason, Joel B. Varley, Klaus Magnus H. Johansen, Lasse Vines, Chris G. Van de Walle
Summary: Pathways and energy barriers for the migration of Ga vacancies (VGa) and Ga interstitials (Gai) in-Ga2O3 have been studied using hybrid functional calculations and the nudged elastic band method. A mechanism for the transformation of VGa between different split configurations has been described. The overall migration barriers for VGa and Gai in different crystal directions have been determined. The results provide insights into the thermally activated recovery processes in irradiated material.
Article
Engineering, Electrical & Electronic
Wei Mi, Jinze Tang, Xinrong Chen, Xinwei Li, Bingkun Li, Liyuan Luo, Liwei Zhou, Rongrong Chen, Di Wang, Jinshi Zhao
Summary: PIN-structured photodiodes were fabricated by sputtering intrinsic-Ga2O3 and n-Ga2O3 with Ti doping on p-Si substrates. The fabricated Ga2O3 films were amorphous, and the roughness increased with Ti doping concentration. The photodiodes showed high reverse breakdown voltages, significant photoelectric response to 254 nm UV light, and high responsivity at -10 V bias.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Materials Science, Multidisciplinary
Xuyang Dong, Shunjie Yu, Wenxiang Mu, Xiaolong Zhao, Yiyuan Liu, Tong Hou, Jin Zhang, Boyang Chen, Zhengyuan Li, Zhitai Jia, Xiaohu Hou, Shibing Long, Xutang Tao
Summary: Co-doped beta-Ga2O3 single crystal exhibits excellent stability in resistivity, making it suitable for extreme temperature environments. It has high transmittance and low free-electron concentration, and shows a stable temperature-dependent resistivity plateau from room temperature to 300 degrees C. This work indicates the potential application of Co-doped beta-Ga2O3 in extreme environments and provides more possibilities in the thermal design of beta-Ga2O3 devices.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Materials Science, Multidisciplinary
Tao Wang, Huili Liang, Zuyin Han, Yanxin Sui, Zengxia Mei
Summary: The study presents an integrated flexible deep ultraviolet photodetection system that utilizes the coupling of the human body with electromagnetic radiation to harvest energy and convert light into electricity, offering a new power solution for wearable electronics.
ADVANCED MATERIALS TECHNOLOGIES
(2021)
Article
Chemistry, Multidisciplinary
Zexiang Deng
Summary: In this study, the anisotropic dependence of radiation arising from exciton recombination in the Ga2O3/MoS2 heterostructure was investigated using density functional theory and the Bethe-Salpeter equation. The results revealed that the angle-dependent intensities of radiation were closely related to the dipole moment of excitons, providing guidance for exciton dynamics in low dimensional systems and the rational design of optoelectronic devices.
Article
Chemistry, Multidisciplinary
Song-Tao Dong, Zhuang Fu, Miaocheng Yu, Jia-Ling Jiang, Xiaoyun Jin, Yu-Hang Guo, Lei Wang, Ya-Mei Zhang
Summary: Self-powered photoelectric devices, as a new type of sensor without an external power source, have great potential advantages in portable and wearable personal devices. This study explores a novel solution based on ion migration induced self-powered photodetectors, demonstrating that ion migration can be intentionally used for self-powered photoelectric devices.
Article
Physics, Applied
Bikramjit Chatterjee, Wenshen Li, Kazuki Nomoto, Huili Grace Xing, Sukwon Choi
Summary: Thermal analysis and characterization of ultra-wide bandgap beta-gallium oxide vertical FinFET devices were conducted in this study, revealing a trade-off in thermal design when minimizing the footprint of multi-fin FinFET arrays. Adjusting the orientation of the fin channel significantly reduced the temperature rise, demonstrating the impact of the anisotropy of Ga2O3 thermal conductivity on device performance.
APPLIED PHYSICS LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Igor B. Olenych, Liubomyr S. Monastyrskii, Andriy P. Luchechko, Andriy M. Kostruba, Yuriy Eliyashevskyy
APPLIED NANOSCIENCE
(2020)
Article
Nanoscience & Nanotechnology
A. V. Kukhta, S. A. Maksimenko, K. M. Degtyarenko, T. N. Kopylova, B. Sadovyi, B. Turko, A. Luchechko, I. N. Kukhta, H. Klym, A. N. Lugovskii, I. Karbovnyk
APPLIED NANOSCIENCE
(2020)
Article
Materials Science, Coatings & Films
Vyacheslav Vasyltsiv, Andriy Luchechko, Yaroslav Zhydachevskyy, Lyudmyla Kostyk, Roman Lys, Dmytro Slobodzyan, Rafal Jakiela, Bohdan Pavlyk, Andrzej Suchocki
Summary: The optical properties of beta-Ga2O3:Cr crystals can be significantly improved by annealing in oxygen atmosphere and codoping with magnesium, resulting in increased Cr3+ luminescence yield and resistivity changes.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Engineering, Electrical & Electronic
I Karbovnyk, B. Sadoviy, B. Turko, A. M. Kostruba, A. Luchechko, V. S. Vasil'yev, R. Serkiz, Y. Kulyk, H. Klym, P. K. Khanna, A. Kukhta
Summary: The study developed a composite material using ZnO microneedles and Alq(3) thin film, which demonstrated significant enhancement in UV emission and visible emission under laser excitation. This enhancement is attributed to the interaction between ZnO and Alq(3) molecules, suggesting potential applications in OLED devices as emitting layers.
OPTICAL AND QUANTUM ELECTRONICS
(2021)
Article
Crystallography
Halyna Klym, Ivan Karbovnyk, Andriy Luchechko, Yuriy Kostiv, Viktorija Pankratova, Anatoli I. Popov
Summary: BaGa2O4 ceramics doped with Eu3+ ions were studied for their phase composition and microstructural features. Eu3+ ions led to the formation of additional phases and defects near grain boundaries. The presence of Eu3+ ions caused the agglomeration and fragmentation of free-volume defects in BaGa2O4 ceramics, resulting in the expansion and increased number of nanosized pores.
Article
Physics, Multidisciplinary
S. Ubizskii, O. Poshyvak, D. Afanassyev, A. Luchechko, V Rabyk, Ya Zhydachevskyy
Summary: The afterglow and optically stimulated luminescence response of YAlO3:Mn2+ single crystals are studied and found to follow hyperbolic kinetics, suggesting the presence of multiple defects competing in trapping/re-trapping and releasing the carriers. Additionally, a technique using the peculiarity of the initial part of optically stimulated response is proposed to determine the absorbed dose of irradiation.
ACTA PHYSICA POLONICA A
(2022)
Article
Physics, Multidisciplinary
V. Vasyltsiv, L. Kostyk, O. Tsvetkova, R. Lys, M. Kushlyk, B. Pavlyk, A. Luchechko
Summary: The temperature-dependencies of X-ray excited luminescence spectra were investigated in β-Ga2O3 crystals. The luminescence intensity was found to strongly depend on the resistivity of the crystals. High-electron concentration crystals exhibited a blue luminescence band at 300K, which was observed over a wide temperature range and only quenched above 400K. In high-resistance crystals, the blue luminescence band was suppressed while the UV band increased and prevailed at low temperatures.
ACTA PHYSICA POLONICA A
(2022)
Article
Physics, Multidisciplinary
L. Vasylechko, V Sydorchuk, V Hreb, S. Ubizskii, S. Khalameida, A. Luchechko, Y. Zhydachevskyy
Summary: Chromium-doped Li2SnO3 and Na2SnO3 nanocrystalline materials with honeycomb layered monoclinic structure were successfully synthesized by heat treatment of hydrothermally derived precursors. The evolution of phase composition, structural parameters, and average grain size of the materials was evaluated using Rietveld refinement. A deep-red emitting Li2SnO3:Cr3+ phosphor was obtained and reported for the first time. The unique photoluminescence characteristics of Cr3+ ions in Na2SnO3 were observed at room temperature.
ACTA PHYSICA POLONICA A
(2022)
Article
Engineering, Electrical & Electronic
Yu Venhryn, I. D. Popovych, A. S. Serednytski, O. F. Kolomys, A. P. Luchechko, V. V. Strelchuk
Summary: In this study, ZnO and TiO2 nanopowders were prepared by pulsed laser reactive ablation of metallic targets. The structural, optical, and luminescent properties were investigated using various spectroscopic techniques. The results showed that the luminescent properties of the nanopowders could be modified by pulsed laser annealing, which changed their intrinsic defective structure. The optimal excitation wavelengths for luminescence were also determined.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2022)
Article
Physics, Condensed Matter
Halyna Klym, Ivan Karbovnyk, Andriy Luchechko, Yuriy Kostiv, Anatoli I. Popov
Summary: It has been studied that the addition of Eu3+ ions in BaGa2O4 ceramics causes the evolution of defect-related extended free volumes. The increase in the number of Eu3+ ions leads to the agglomeration and fragmentation of free-volume defects, as well as the expansion and increase in the number of nanosized pores.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2022)
Article
Chemistry, Physical
Dmytro Slobodzyan, Markiyan Kushlyk, Roman Lys, Josyp Shykorjak, Andriy Luchechko, Marta Zylka, Wojciech Zylka, Yaroslav Shpotyuk, Bohdan Pavlyk
Summary: The effect of a weak magnetic field and X-irradiation on the rearrangement of near-surface p-type silicon layers was studied. It was found that these external fields increase the positive accumulated charge in the spatial charge region and the SiO2 dielectric layer. Defects and impurities contribute to the generation of charge carriers, causing a deterioration in the rectifier properties of the silicon barrier structures.
Article
Chemistry, Inorganic & Nuclear
Yaroslav Zhydachevskyy, Vitaliy Mykhaylyk, Vasyl Stasiv, Lev -Ivan Bulyk, Vasyl Hreb, Iryna Lutsyuk, Andriy Luchechko, Shusaku Hayama, Leonid Vasylechko, Andrzej Suchocki
Summary: This study investigates the photoluminescence of Me4+ in Ga2O3-Al2O3 solid solutions under different chemical compositions, temperatures, and hydrostatic pressures. The results show a transformation of the crystal structure from rhombohedral to monoclinic phase as the Ga content exceeds 15%. The application of hydrostatic pressure allows the obtainment of a corundum-like phase. The possibility of using these phosphor materials for low-temperature luminescence thermometry is also evaluated.
INORGANIC CHEMISTRY
(2022)
Article
Nanoscience & Nanotechnology
A. Luchechko, V. Vasyltsiv, M. Kushlyk, D. Slobodzyan, M. Balaz, J. Cebulski, K. Szmuc, J. Szlezak, Y. Shpotyuk
Summary: β-Ga2O3 nanocrystals were successfully obtained by high-energy ball milling, and the characteristics of the obtained powders were characterized using various analysis methods. The nanocrystals exhibited irregular shapes and a size distribution of 50-80 nm, confirming the formation of β-Ga2O3. Photoluminescence spectra showed three luminescence bands and a blue shift of the emission maxima under different milling conditions.
APPLIED NANOSCIENCE
(2022)
Article
Chemistry, Inorganic & Nuclear
Leonid Vasylechko, Vitalii Stadnik, Vasyl Hreb, Yaroslav Zhydachevskyy, Andriy Luchechko, Vitaliy Mykhaylyk, Hans Kraus, Andrzej Suchocki
Summary: Calcium dialuminate, CaAl4O7, nanopowders doped with chromium ions were synthesized via sol-gel solution combustion method. The effects of thermal treatment temperature on the phase composition, crystal structure, and microstructure of the nanocrystalline materials were investigated. The photoluminescent properties of the CaAl4O7 nanophosphors activated with Cr3+ ions were studied, showing deep red and near-infrared luminescence.
Article
Chemistry, Inorganic & Nuclear
Vitalii Stadnik, Vasyl Hreb, Andriy Luchechko, Yaroslav Zhydachevskyy, Andrzej Suchocki, Leonid Vasylechko
Summary: In this study, a series of strontium dialuminate SrAl4O7 nanopowders doped with chromium and manganese ions were synthesized using the sol-gel solution combustion method. The evolution of phase composition, crystal structure, and microstructural parameters was investigated using X-ray powder diffraction and scanning electron microscopy techniques. The photoluminescent properties of the nanophosphors were studied, showing deep-red emission dependent on dopant concentration and annealing temperature, with discussions on the octahedral surroundings around Cr3+ or Mn4+ ions.
