Journal
NANOTECHNOLOGY
Volume 30, Issue 50, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/ab4201
Keywords
ultraviolet GaN mu LEDs; electroluminescence; sidewall defects; heat dissipation
Funding
- Natural Sciences and Engineering Research Council [STPGP-463397-2014]
- Canadian Microelectronics Corporation (CMC)
- MW Canada Ltd.
- Waterloo Institute of Nanotechnology (WIN)
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In this paper, the size-dependent optical and electrical properties of 365 nm InGaN/AlGaN ultraviolet micron-size light-emitting diodes (mu LEDs) on c-plane sapphire substrates is investigated. The series resistance of the mu LED increased from 20 Omega to 15 k Omega when the diameter of the device decreased from 150 to 3 mu m. The ideality factor increased from 4 to 4.6 over the same range of diameters due to the increase in the defect density for the smaller mu LEDs Moreover, electroluminescence characterization showed a fixed and red-spectral-shift emission for the mu LEDs with diameters smaller than 10 mu m and larger than 15 mu m, respectively. The redshift was due to band-gap narrowing in InGaN/AlGaN multi-quantum wells as a result of selfheating at higher current densities in the larger diameter mu LEDs. Due to an increase in the heat dissipation of devices with a high surface to volume ratio, the smaller diameter devices were found to have higher light extraction efficiency and no measurable emission spectrum shift.
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