Journal
MOLECULES
Volume 24, Issue 18, Pages -Publisher
MDPI
DOI: 10.3390/molecules24183249
Keywords
piezoresistivity; indium-arsenide-phosphide (InAsP) nanowires; electronic structure simulations; density functional theory
Funding
- Korea Institute of Science and Technology Information (KISTI) institutional RD program [K-19-L02-C07]
- National Research Foundation of Korea [K-19-L02-C07] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Strong piezoresistivity of InAsP nanowires is rationalized with atomistic simulations coupled to Density Functional Theory. With a focal interest in the case of the As(75%)-P(25%) alloy, the role of crystal phases and phosphorus atoms in strain-driven carrier conductance is discussed with a direct comparison to nanowires of a single crystal phase and a binary (InAs) alloy. Our analysis of electronic structures presents solid evidences that the strong electron conductance and its sensitivity to external tensile stress are due to the phosphorous atoms in a Wurtzite phase, and the effect of a Zincblende phase is not remarkable. With several solid connections to recent experimental studies, this work can serve as a sound framework for understanding of the unique piezoresistive characteristics of InAsP nanowires.
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