Effect of cetyl-trimethyl-ammonium-bromide (CTAB) and bis (3-sulfopropyl) disulfide (SPS) on the through-silicon-via (TSV) copper filling

Published 2019 View Full Article

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Title
Effect of cetyl-trimethyl-ammonium-bromide (CTAB) and bis (3-sulfopropyl) disulfide (SPS) on the through-silicon-via (TSV) copper filling
Authors
Keywords
Through-silicon-via, Copper deposition, Cetyl-trimethyl-ammonium- bromide
Journal
MICROELECTRONIC ENGINEERING
Volume 217, Issue -, Pages 111109
Publisher
Elsevier BV
Online
2019-08-10
DOI
10.1016/j.mee.2019.111109

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