Journal
JOURNAL OF RAMAN SPECTROSCOPY
Volume 50, Issue 11, Pages 1642-1648Publisher
WILEY
DOI: 10.1002/jrs.5702
Keywords
charge carriers; doping profile; fano resonance; micro-raman spectroscopy; silicon nanowires
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Funding
- Ministry of Science and Higher Education of the Russian Federation [16.2969.2017/4.6]
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Raman spectroscopy is used to probe free charge carriers in layers of silicon nanowires (SiNWs) formed by metal-assisted chemical etching of crystalline silicon (c-Si) wafers followed by additional doping with boron. One-phonon Raman spectra of the boron-doped SiNWs are strongly modified due to the Fano effect that allowed us to determine the free carrier concentration in the nanowires in the range from 10(19) to 10(20) cm(-3), depending on the doping conditions. The micro-Raman mapping was used to determine the depth profile of charge carrier density along nanowires, which decreases toward the SiNWs/c-Si interface. The obtained results are discussed in view of possible applications of the Raman spectroscopy for express-diagnostics of doped Si nanostructures for photonics and thermoelectric applications.
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