Annealing effects on physical properties of a Au/a-Si:H Schottky diode prepared via the plasma-enhanced chemical vapor deposition technique

Published 2019 View Full Article

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Title
Annealing effects on physical properties of a Au/a-Si:H Schottky diode prepared via the plasma-enhanced chemical vapor deposition technique
Authors
Keywords
a-Si:H, Complex impedance analysis, Nanocrystalline phase, nc-Si, Plasma-enhanced chemical vapor deposition
Journal
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
Volume 132, Issue -, Pages 18-25
Publisher
Elsevier BV
Online
2019-04-08
DOI
10.1016/j.jpcs.2019.04.006

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