High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2 Gate Dielectric

Authors

Keywords

Journal

Volume 66, Issue 8, Pages 3382-3386

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2019-07-08

DOI

10.1109/ted.2019.2924135

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