Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface

Published 2019 View Full Article

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Title
Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface
Authors
Keywords
Step meandering, Ehrlich-Schwoebel barrier, Nitrides, Crystal morphology, Molecular beam epitaxy, Crystal growth modeling
Journal
APPLIED SURFACE SCIENCE
Volume 484, Issue -, Pages 771-780
Publisher
Elsevier BV
Online
2019-04-10
DOI
10.1016/j.apsusc.2019.04.082

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