Journal
APPLIED PHYSICS LETTERS
Volume 115, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5087423
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Funding
- National Natural Science Foundation of China [61574081, 61804079, 61874059]
- University Natural Science Foundation of Jiangsu Province [18KJD510005]
- Senior Talent Foundation of Jiangsu Province [SZDG2018007]
- Innovative doctor program of Jiangsu Province [CZ1060619001]
- Science Research Funds for Nanjing University of Posts and Telecommunications [NY218110, NY217116, KFJJ20170101]
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Silicon dioxide memristors possess multiple resistance states and can be used as a key component of memory devices and neuromorphic systems. However, their conductive mechanisms are incompletely understood, and their resistance switching (RS) variability is a major challenge for commercialization of memristors. In this work, by combining the desirable properties of silicon dioxide with those of a two-dimensional MXene material (Ti3C2), a memristor based on an MXene/SiO2 structure is fabricated. The Cu/MXene/SiO2/W memristive devices exhibit excellent switching performance compared with traditional Cu/SiO2/W devices under the same conditions. Furthermore, the role of the MXene/SiO2 structure in the SiO2-based memristors is revealed by the physical characterization of the MXene and first-principles calculation of the MXene/SiO2 structure. The results indicate that the conductive filaments (CFs) are more likely to grow along the locations of MXene nanostructures, which reduces the randomness of CFs in the Cu/MXene/SiO2/W memristors and further improves the device performance. Meanwhile, the MXene/SiO2 structure appears to greatly reduce the mobility of Cu ions in the entire RS region, as well as improve the performance of the SiO2-based memristors while maintaining the operating voltages low. Published under license by AIP Publishing.
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