Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 29, Issue 49, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201906585
Keywords
2D tellurium; chemical vapor deposition growth; electronics; optoelectronics
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Funding
- National Natural Science Foundation of China [21825103, 51802103]
- Hubei Provincial Natural Science Foundation of China [2019CFA002, 2019CFB300]
- Opening Fund of Hubei Key Laboratory of Bioinorganic Chemistry Materia Medica [BCMM201903]
- Fundamental Research Funds for the Central University [2019kfyXMBZ018]
- Analytical and Testing Center in Huazhong University of Science and Technology
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Tellurium (Te), as an elementary material, has attracted intense attention due to its potentially novel properties. However, it is still a great challenge to realize high-quality 2D Te due to its helical chain structure. Here, ultrathin Te flakes (5 nm) are synthesized via hydrogen-assisted chemical vapor deposition method. The density functional theory calculations and experiments confirm the growth mechanism, which can be ascribed to the formation of volatile intermediates increasing vapor pressure of the source and promoting the reaction. Impressively, the Te flake-based transistor shows high on/off ratio approximate to 10(4), ultralow off-state current approximate to 8 x 10(-13) A, as well as a negligible hysteresis due to reducing thermally activated defects at 80 K. Moreover, Te-flake-based phototransistor demonstrates giant gate-dependent photoresponse: when gate voltage varies from -70 to 70 V, I-on/I-off is increased by approximate to 40-fold. The hydrogen-assisted strategy may provide a new approach for synthesizing other high quality 2D elementary materials.
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