Article
Engineering, Electrical & Electronic
Shunli Wang, Chao Wu, Fengmin Wu, Fabi Zhang, Aiping Liu, Nie Zhao, Daoyou Guo
Summary: Wearable photodetectors have attracted great attention for their potential applications in smart monitoring, and self-powered technology is the future trend. This study successfully constructed an Ag NWs/a-GaO Schottky junction, demonstrating a DUV photodetector with excellent photoelectric performance and mechanical properties.
SENSORS AND ACTUATORS A-PHYSICAL
(2021)
Article
Materials Science, Multidisciplinary
Yancheng Chen, Yingjie Lu, Xun Yang, Shunfang Li, Kaiyong Li, Xuexia Chen, Zhiyang Xu, Jinhao Zang, Chongxin Shan
Summary: The bandgap engineering of gallium oxide (Ga2O3) through controlling the oxygen vacancy density and crystalline disorder has been demonstrated to improve conductivity and significantly reduce the bandgap. Practical applications of bandgap engineering by crystalline disorder have led to the development of deep-ultraviolet photodetectors with high responsivity and detectivity. These findings pave the way for high-performance Ga2O3 optoelectronic and electronic devices.
MATERIALS TODAY PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Chen-Yue Zhu, Xi-Shen Guo, Yi-Hang Dai, Zhen Yang, Chun-Yan Wu, Li Wang, Xiang Zhang, Xiu-Juan Wang, Lin-Bao Luo
Summary: In this work, a CuxO/Ga2O3 heterojunction was fabricated through the spontaneous oxidation of Cu film during electron beam evaporation. The heterojunction device exhibited a UV/visible rejection ratio of 435 at zero bias, enabling self-powered deep-UV photodetection. With 265-nm illumination, the responsivity and specific detectivity reached 0.97 mA.W-1 and 6.28 x 10(10) Jones, respectively. The device also showed a fast response speed, which can be attributed to the fully depleted thin CuxO layer, suggesting its ability to detect rapidly switched optical signals. This work sheds light on the facile fabrication of self-powered DUV photodetectors based on β-Ga2O3.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Tianchen Yang, Chengyun Shou, Long Xu, Jason Tran, Yanwei He, Yuan Li, Peng Wei, Jianlin Liu
Summary: This study focuses on the application of deep-ultraviolet photodetectors and the fabrication of fi-MgGaO metal-semiconductor-metal photodetectors. Different Mg atomic percentages were used to grow fi-phase MgGaO ternary alloy thin films. The experimental results show that the alloy has an ultrawide bandgap and high light transmittance in the visible region. This study suggests the potential of fi-MgGaO semiconductors in deep-ultraviolet photodetectors and other photonic device applications.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Tianchen Yang, Chengyun Shou, Long Xu, Jason Tran, Yanwei He, Yuan Li, Peng Wei, Jianlin Liu
Summary: In this study, deep-ultraviolet fi-MgGaO metal-semiconductor-metal photodetectors were fabricated and their responsivity was investigated. The results showed that these detectors have potential for deep-ultraviolet photodetection and other photonic device applications.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Zeng Liu, Ling Du, Shao-Hui Zhang, Lei Li, Zhao-Ying Xi, Jin-Cheng Tang, Jun-Peng Fang, Mao-Lin Zhang, Li-Li Yang, Shan Li, Pei-Gang Li, Yu-Feng Guo, Wei-Hua Tang
Summary: A metal-semiconductor-metal (MSM) photodetector was constructed using microprocessing techniques, incorporating a β-gallium oxide thin film. The photodetector exhibited high photoresponsivity, specific detectivity, external quantum efficiency, and a linear dynamic range under 254-nm UV light illumination. The high photoconductive gain observed may lead to persistent photocurrent and suggest potential use in high deep-ultraviolet photoresponse applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Materials Science, Multidisciplinary
Chun-Yan Wu, Yu-Xuan Le, Li-Yan Liang, Jing-Yue Li, Feng-Xia Liang, Shi-Rong Chen, Xiao-Ping Yang, Yu-Xue Zhou, Lin-Bao Luo
Summary: In this study, a sensitive deep ultraviolet (DUV) photodetector was fabricated using CsPbBr3 nanosheets synthesized through confined-space growth at room temperature. The photodetector exhibited a blueshift in peak photoresponse with decreasing thickness, and a 68 nm CsPbBr3 nanosheet based device displayed a peak response to 265 nm illumination. Theoretical simulation revealed that the blueshift was related to the wavelength-dependent absorption coefficient of CsPbBr3 nanosheets.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2023)
Article
Nanoscience & Nanotechnology
Wenrui Zhang, Wei Wang, Jinfu Zhang, Tan Zhang, Li Chen, Yu Zhang, Yanwei Cao, Li Ji, Jichun Ye
Summary: By establishing a low-defect diffusion barrier, the responsivity and response time of ε-Ga2O3 MSM photodetectors were improved simultaneously.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Physical
Yan Wang, Jialiang Jiang, Zhichao Song, Jun Zhang
Summary: Lithium gallium oxide (LiGaO2 & LiGa5O8) nanoparticles were successfully synthesized using thermal evaporation method under different atmospheric conditions, with differing synthesis preferences for each type in air or argon. The nanoparticle-based photodetector exhibited significant changes in electrical and luminescence properties, and showed sensitivity to temperature fluctuations.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Optics
Bo Peng, Lei Yuan, Hongpeng Zhang, Hongjuan Cheng, Shengnan Zhang, Yimen Zhang, Yuming Zhang, Renxu Jia
Summary: A Schottky barrier diode solar-blind photodetector was fabricated on a single crystal beta-Ga2O3, showcasing a high light to dark current ratio and fast response speed at 254 nm. The device exhibits self-powered action and linearly enhanced photocurrent with increasing illumination intensity. The photoresponse time varies under different bias conditions, suggesting a mechanism involving the release of trapped carriers under applied bias.
Article
Materials Science, Multidisciplinary
V Montedoro, A. Torres, S. Dadgostar, J. Jimenez, M. Bosi, A. Parisini, R. Fornari
Summary: Cathodoluminescence investigations were conducted on epsilon-Ga2O3 samples grown with different carrier gases, showing that an increase in Si concentration results in reduced emission intensity, with no evidence of band-to-band recombination. Temperature dependence of the CL signal suggests radiative transitions from the CB to deep acceptor states, likely of intrinsic nature.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Boyan Wang, Ming Xiao, Jack Knoll, Cyril Buttay, Kohei Sasaki, Guo-Quan Lu, Christina Dimarino, Yuhao Zhang
Summary: This study investigates the thermal resistance of a Ga2O3 Schottky barrier diode, demonstrating the importance of proper thermal management for ensuring device reliability and performance in high-power applications.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Xiangyu Xu, Ziqian Sheng, Jueli Shi, Xin Chen, Yaxin He, Wenjing Xu, Xu Zhang, Duanyang Chen, Hongji Qi, Kelvin H. L. Zhang
Summary: The bandgap of (AlxGa1-x)(2)O-3 thin films can be modulated by varying the Al contents, resulting in high-performance photodetectors for solar-blind UV bands. The detection cut-off wavelengths and response peaks of the photodetectors can be tuned by changing the Al contents. The wide variations of the bandgap are mainly due to the upshift of the conduction band edges induced by Al 3s state hybridization.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Wenshan Chen, Xiangyu Xu, Jiaye Zhang, Jueli Shi, Jiawei Zhang, Wencheng Chen, Quin Cheng, Yuzheng Guo, Kelvin H. L. Zhang
Summary: This work reports the fabrication and performance of high performance solar-blind deep-UV photodetectors using (InxGa1-x)(2)O-3 thin films. The results show that controlling the In content in the films can achieve high sensitivity to solar-blind UV spectrum. Compared to Ga2O3, the (InxGa1-x)(2)O-3 films demonstrate enhanced performance due to the modulation of optical and electronic properties by In.
ADVANCED OPTICAL MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Sanghyun Moon, Donggyu Lee, Jehwan Park, Jihyun Kim
Summary: This study demonstrates the fabrication of a high dielectric constant, 2D amorphous gallium oxide (GaOX) using the liquid-gallium squeezing technique. The GaOX is combined with a beta-phase gallium oxide (β-Ga2O3) conducting nanolayer to form a stable MISFET. The incorporation of the 2D GaOX gate dielectric layer in an active channel layer enables the facile fabrication of MISFET devices at room temperature.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Physics, Applied
Hadeel Alamoudi, Bin Xin, Somak Mitra, Mohamed N. Hedhili, Singaravelu Venkatesh, Dhaifallah Almalawi, Norah Alwadai, Zohoor Alharbi, Ahmad Subahi, Iman S. Roqan
Summary: In this study, p-n junction devices based on wide-bandgap p-type MnO quantum dots and n-type Si-doped GaN were fabricated. The fabricated solar-blind deep UV photodetector demonstrated high photocurrent response, low dark current, and superior photo-responsivity, making it suitable for low light level applications.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Tamilarasan Palanisamy, Somak Mitra, Nitinkumar Batra, Jasmin Smajic, Abdul-Hamid Emwas, Iman Roqan, Pedro M. F. J. Costa
Summary: UV photodetectors designed using graphene and carbon nitride thin films exhibit exceptional electrical and optical properties, with a responsivity of 10^3 A W-1 to UV radiation and fast response and recovery times. The film thickness has a significant impact on device performance, with thinner CNTFs leading to better results.
ADVANCED MATERIALS INTERFACES
(2022)
Article
Chemistry, Physical
Linpeng Dong, Penghui Li, Chong Li, Iman S. Roqan, Bo Peng, Bin Xin, Weiguo Liu
Summary: This study investigates the phonon-limited mobility and device performance limits in fluorinated diamane monolayers. The simulations show that the mobility of fluorinated diamane is concentration-dependent, with high electron and hole mobility at certain carrier concentrations. The findings also demonstrate that fluorinated diamane MOSFETs have superior potential compared to other 2D materials and can meet the requirements for high-performance and low-power applications.
Article
Materials Science, Ceramics
Ahmed Samir Bakry, Nuha Al-Harbi, Yas Al-Hadeethi, Mona A. Abbassy, N. K. Katturi, B. Xin, I. S. Roqan, Hiba Mohammed, Robert Hill
Summary: The study aimed to evaluate the effectiveness of BioMin C and BioMin F in treating dentin hypersensitivity. Dentin surfaces were treated, and then covered with BioMin C and BioMin F pastes, followed by an acid challenge. The coverage percentages of bioactive materials before and after the erosion challenge were compared. Chemical analyses were performed using Raman spectroscopy, X-ray diffraction, and scanning electron microscopy. The specimens treated with the bioactive pastes showed complete coverage with a crystalline layer. The erosive acid challenge did not significantly affect the dentin coverage percentage. The crystalline layer formed by BioMin C contained hydroxyapatite crystals, while that formed by BioMin F paste contained brushite crystals. These tested pastes may be beneficial in treating dentin hypersensitivity.
JOURNAL OF NON-CRYSTALLINE SOLIDS
(2023)
Article
Engineering, Electrical & Electronic
M. Ikram Md Taib, M. A. Ahmad, E. A. Alias, A. Alhassan, I. A. Ajia, M. M. Muhammed, I. S. Roqan, S. P. DenBaars, J. S. Speck, S. Nakamura, N. Zainal
Summary: In-surfactant was introduced during the growth of high temperature GaN quantum barriers and GaN interlayer in InGaN/GaN green LEDs. Results showed that the introduction of In-surfactant improved LED growth, particularly in the GaN interlayer. It improved the morphology of the interlayer, allowed it to serve as a good surface growth, and effectively improved the multi-quantum wells. Moreover, the introduction of In-surfactant shifted the emission wavelength towards red, reduced the forward voltage of the LEDs, and allowed faster carrier decay lifetime.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Nanoscience & Nanotechnology
Norah Alwadai, Zohoor Alharbi, Fatimah Alreshidi, Somak Mitra, Bin Xin, Hadeel Alamoudi, Kishor Upadhyaya, Mohamed N. Hedhili, Iman S. Roqan
Summary: This study presents a facile fabrication process for a high-responsivity solar-blind self-powered UV-C photodetector based on a p-n wide band gap semiconductor heterojunction structure. The heterojunction structure consists of solution-processed manganese oxide quantum dots (MnO QDs) as the p-type material and exfoliated Sn-doped beta-Ga2O3 microflakes as the n-type material. The resulting photodetector exhibits excellent solar-blind UV-C photoresponse characteristics and demonstrates a promising approach for the development of flexible and highly efficient UV-C devices suitable for large-scale fixable applications.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Nanoscience & Nanotechnology
Norah Alwadai, Zohoor Alharbi, Fatimah Alreshidi, Somak Mitra, Bin Xin, Hadeel Alamoudi, Kishor Upadhyaya, Mohamed N. Hedhili, Iman S. Roqan
Summary: In this work, a facile fabrication process for a high-responsivity solar-blind self-powered UV-C photodetector based on a p-n WBGS heterojunction structure is demonstrated. The heterojunction structures based on p-type MnO QDs and n-type Sn-doped beta-Ga2O3 microflakes show excellent solar-blind UV-C photoresponse characteristics. The XPS analysis confirms the good band alignment between p-type MnO QDs and n-type beta-Ga2O3 microflakes with a type-II heterojunction.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Dhaifallah Almalawi, Sergei Lopatin, Paul R. Edwards, Bin Xin, Ram C. Subedi, Mohammed A. Najmi, Fatimah Alreshidi, Alessandro Genovese, Daisuke Iida, Nimer Wehbe, Boon S. Ooi, Kazuhiro Ohkawa, Robert W. Martin, Iman S. Roqan
Summary: In this study, a catalyst-free single-step growth strategy is explored to grow high-quality self-assembled single-crystal vertical GaN nanowires (NWs) on a wide range of substrates using pulsed laser deposition. The obtained NWs show single-crystalline nature and high optical quality. The growth is initiated by an in situ polycrystalline layer and then transforms into single-crystalline NW nucleation.
Proceedings Paper
Engineering, Electrical & Electronic
Iman S. Roqan, Norah Alwadai, Somak Mitra, Hadeel Amoudi
Summary: In this study, a photodetector was fabricated by spray-coating zinc oxide quantum dots on a copper oxide micro-pyramid array. The p-n junction structure enhanced the performance of the device, resulting in high photo-responsivity and self-powered photoresponse. These high-performance solar-bind DUV photodetector arrays have the potential for mass production and wide applications.
6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022)
(2022)
