Journal
PHYSICAL REVIEW MATERIALS
Volume 3, Issue 6, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.3.061201
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Funding
- SMART, one of seven centers of nCORE, a Semiconductor Research Corporation program - National Institute of Standards and Technology (NIST)
- NSF through the UMN MRSEC program [DMR-1420013]
- NSF through the NNIN program
- NSF [DMR-1539916]
- Department of Energy [DE-SC0018994]
- Pennsylvania State University Two-Dimensional Crystal Consortium-Materials Innovation Platform (2DCC-MIP) - NSF [DMR-1539916]
- U.S. Department of Energy (DOE) [DE-SC0018994] Funding Source: U.S. Department of Energy (DOE)
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Whereas thin films of topological insulators grown by molecular beam epitaxy often display regular, triangular features, Bi2Se3 films grown onto yttrium iron garnet (YIG) display much greater disorder. Here, we present observations of various types of disorder present in these films using atomic force microscopy and scanning transmission electron microscopy. The investigation reveals the presence of an amorphous metal oxide layer between the substrate and the film, which appears to smooth out the nanometer-scale undulations in the YIG surface. It also shows the existence of quasiordered arrays of heavy atoms in some interfacial regions, as well as rotations and tilting between adjacent grains and basal twinning at various heights in the film. Using density functional theory, we explore the impact of these prominent basal twins on the electronic structure of the film.
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