Ionization-induced thermally activated defect-annealing process in SiC
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Title
Ionization-induced thermally activated defect-annealing process in SiC
Authors
Keywords
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Journal
Physical Review Materials
Volume 3, Issue 6, Pages -
Publisher
American Physical Society (APS)
Online
2019-06-20
DOI
10.1103/physrevmaterials.3.063609
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