Journal
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
Volume 7, Issue 2, Pages 865-878Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JESTPE.2019.2904290
Keywords
Ac-dc power converters; Loss measurement; power semiconductor devices; schottky diodes; silicon carbide
Categories
Funding
- National Science Foundation
- Stanford Graduate Fellowship Program
- Stanford's SystemX Alliance
Ask authors/readers for more resources
In high-frequency (HF) and very-high-frequency (VHF) rectifiers, silicon carbide (SiC) Schottky diodes exhibit higher losses compared to what is reported in manufacturer-provided simulation models, with additional power loss stemming from energy dissipation during the charging and discharging of the junction output capacitance (C-J). Because these losses are not included in manufacturer simulation models and have not been well-studied for commercially available SiC Schottky diodes, we have experimentally measured them using the Sawyer-Tower circuit. From these measurements, we compare the losses across manufacturers, current rating, generation, voltage rating, and packaging. We then demonstrate the performance of these devices on a 20-MHz class-DE rectifier and compare their power dissipation from the simulation and experimental measurements. Finally, by incorporating these losses in device power dissipation calculations in various rectifier topologies, we propose suggestions on device selection to optimize converter efficiencies.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available