Journal
APL MATERIALS
Volume 7, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5097317
Keywords
-
Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2017R1D1A1B03029093]
Ask authors/readers for more resources
Analog synaptic weight modulation that is linear, symmetric, and exhibits long-term stability is demonstrated by the resistance changes in a Pt/indium-tin-oxide (ITO)/CeO2/Pt memristor. Distinct from a Pt/CeO2/Pt memristor without the ITO layer, which shows highly nonlinear and asymmetric resistance changes, the Pt/ITO/CeO2/Pt memristor exhibits linear and symmetric resistance changes in proportion to the number of voltage applications with opposite polarities for potentiation and depression behaviors. The Pt/CeO2/Pt memristor also displays high long-term stability of modulated synaptic weight over time, which originates from the ITO layer acting as a reservoir of oxygen ions drifted from the CeO2 layer to retain the resistance change. Comparison of the results for the Pt/CeO2/Pt and Pt/ITO/CeO2/Pt memristors confirms the role of ITO in the linearity, symmetry, and long-term stability of the resistance change in CeO2-based memristors for use as artificial synapses in neuromorphic systems.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
