4.7 Article

Investigation of Strain Effects on Photoelectrochemical Performance of Flexible ZnO Electrodes

Journal

SCIENTIFIC REPORTS
Volume 9, Issue -, Pages -

Publisher

NATURE PORTFOLIO
DOI: 10.1038/s41598-019-47546-1

Keywords

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Funding

  1. Scientific and Technological Research Council of Turkey [114F360, 315M348]

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In this report, the growth of zinc oxide (ZnO) nanocrystals with various morphologies, nanoflower, nanosheet, and nanorod, on flexible stainless steel (SS) foils to be utilized as photoanodes in photoelectrochemical (PEC) solar cells has been presented. It has been aimed to provide flexibility and adaptability for the next generation systems with the incorporation of SS foils as electrode into PEC cells. Therefore, physical deformation tests have been applied to the prepared ZnO thin film photoanodes. These thin films have been thoroughly characterized before and after straining for better understanding the relationship between the morphology, straining effect and photoelectrochemical efficiency. We observed a notable increase in the maximum incident photon-to-current efficiency (IPCE) and durability of all ZnO photoelectrodes after straining process. The increase in IPCE values by 1.5 and 2.5 folds at 370 nm has been observed for nanoflower and nanorod morphologies, respectively after being strained. The maximum IPCE of 69% has been calculated for the ZnO nanorod structures after straining. Bending of the SS electrodes resulted in the more oriented nanorod arrays compared to its flat counterpart, which improved both the light absorption and also the photo-conversion efficiency drastically. The finite-difference time-domain simulations have also been carried out to examine the optical properties of flat and bent ZnO electrodes. Finally, it has been concluded that SS photoanodes bearing ZnO semiconducting material with nanoflower and nanorod morphologies are very promising candidates for the solar hydrogen generator systems in terms of efficiency, durability, flexibility, and lightness in weight.

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