A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges

Published 2019 View Full Article

Authors

Keywords

Center potential, Hot-carrier effects, Natural length, Short-channel effects, Strained Si, Threshold voltage

Journal

Journal of Computational Electronics

Volume -, Issue -, Pages -

Publisher

Springer Science and Business Media LLC

Online

2019-07-26

DOI

10.1007/s10825-019-01377-5

References

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