Article
Engineering, Electrical & Electronic
Tianchen Yang, Chengyun Shou, Long Xu, Jason Tran, Yanwei He, Yuan Li, Peng Wei, Jianlin Liu
Summary: This study focuses on the application of deep-ultraviolet photodetectors and the fabrication of fi-MgGaO metal-semiconductor-metal photodetectors. Different Mg atomic percentages were used to grow fi-phase MgGaO ternary alloy thin films. The experimental results show that the alloy has an ultrawide bandgap and high light transmittance in the visible region. This study suggests the potential of fi-MgGaO semiconductors in deep-ultraviolet photodetectors and other photonic device applications.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Tianchen Yang, Chengyun Shou, Long Xu, Jason Tran, Yanwei He, Yuan Li, Peng Wei, Jianlin Liu
Summary: In this study, deep-ultraviolet fi-MgGaO metal-semiconductor-metal photodetectors were fabricated and their responsivity was investigated. The results showed that these detectors have potential for deep-ultraviolet photodetection and other photonic device applications.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Physics, Applied
I. Ahmed, S. De Gendt, C. Merckling
Summary: The BaBiO3 perovskite oxide is an interesting material system that exhibits superconductivity when p-doped and predicted topological insulation when n-doped. High-quality single crystalline BaBiO3 films are grown on Si(001) substrates using molecular beam epitaxy, with the growth window established by systematically varying growth parameters.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Physics, Applied
D. N. Lobanov, K. E. Kudryavtsev, M. Kalinnikov, L. Krasilnikova, P. A. Yunin, E. Skorokhodov, M. Shaleev, A. Novikov, B. A. Andreev, Z. F. Krasilnik
Summary: This study reports on stimulated emission (SE) in the near-infrared range from planar InGaN epitaxial layers grown on sapphire substrates. The research found that at temperatures around 190-210K, nonradiative recombination processes dominate the temperature quenching of stimulated emission. Different defect centers play a role in providing free electrons for both InN and InGaN layers, affecting the Shockley-Read-Hall (SRH) recombination rate at high temperatures.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Yimeng Song, Yingfeng He, Yangfeng Li, Huiyun Wei, Peng Qiu, Qianming Huang, Zhiquan He, Junhui Die, Mingzeng Peng, Xinhe Zheng
Summary: In this study, GaN thin films were grown directly on monolayer MoS2 for the first time using plasma-enhanced atomic layer deposition. Various characterization methods revealed the crystalline structure of GaN and the interface properties with mono-MoS2. The growth of GaN on MoS2 was found to follow the Stranski-Krastanov mode, with different growth phases observed depending on the ALD cycles.
CRYSTAL GROWTH & DESIGN
(2021)
Article
Chemistry, Multidisciplinary
Mustaqeem Shiffa, Benjamin T. Dewes, Jonathan Bradford, Nathan D. Cottam, Tin S. Cheng, Christopher J. Mellor, Oleg Makarovskiy, Kazi Rahman, James N. O'Shea, Peter H. Beton, Sergei V. Novikov, Teresa Ben, David Gonzalez, Jiahao Xie, Lijun Zhang, Amalia Patane
Summary: 2D semiconductors show great potential in various fields, but current fabrication methods have limitations. This study demonstrates a bottom-up approach for high-quality, wafer-scale 2SEM based on the wide band gap gallium selenide compound. The optical properties of the layers are utilized for photon sensing in the UV spectrum, offering a scalable route to deep-UV optoelectronics.
Article
Physics, Condensed Matter
Mario Littmann, Dirk Reuter, Donat Josef As
Summary: Remote epitaxy, a new area of research, has the potential to reduce lattice mismatch and simplify film exfoliation. This study focuses on applying this growth method to cubic gallium nitride (c-GaN), a metastable phase. However, nucleating the metastable cubic phase is challenging due to weaker interactions between the substrate and the epitaxial layer. Initially, only polycrystalline wurtzite gallium nitride could be grown, but by optimizing conditions and adding a cubic aluminum nitride buffer layer, predominantly cubic gallium nitride layers can be grown. High-resolution X-ray diffraction measurements confirm a reduction in hexagonal inclusions from 80% to 23%.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Simiao Wu, Ningtao Liu, Hui Li, Jinfu Zhang, Shengcheng Shen, Wei Wang, Ning Xia, Yanwei Cao, Zhicheng Zhong, Wenrui Zhang, Jichun Ye
Summary: This study demonstrates the use of Hf doping strategy to enhance the conductivity and widen the bandgap of epitaxial beta-Ga2O3 thin films. By fabricating Hf-doped beta-Ga2O3 films with different doping ratios, the impact of doping on structural, optical, and transport properties is investigated. Optimized doping of 1%-2% in molar ratio results in high n-type conductivity, carrier mobility, carrier concentration, and an ultrawide bandgap. Additionally, density functional theory calculations reveal the atomic site preference of Hf dopants and their impact on the optical bandgap.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Ara Ghukasyan, Nebile Isik Goktas, Vladimir G. Dubrovskii, Ray R. LaPierre
Summary: Transmission electron microscopy was used to investigate the formation of TSLs in Te-doped GaAs nanowires grown by selective-area molecular beam epitaxy, revealing periodic TSLs only at low V/III flux ratio and intermediate growth temperatures. These results were explained by a kinetic growth model based on diffusion flux feeding the Ga droplet.
Article
Crystallography
Ying-Chieh Wang, Ikai Lo, Yu-Chung Lin, Cheng-Da Tsai, Ting-Chang Chang
Summary: Mg-doped GaN was grown using plasma-assisted molecular beam epitaxy (PAMBE) on a Fe-doped GaN template substrate with a shutter-controlled process. The relationship between the N/Ga flux ratio and the transition from n-type to p-type conductivity of Mg-doped GaN was studied. The presence of Mg flux improved crystal quality and carrier mobility by preventing the formation of structural defects in GaN epi-layers.
Article
Nanoscience & Nanotechnology
Joseph Roth, Tatiana Kuznetsova, Leixin Miao, Alexej Pogrebnyakov, Nasim Alem, Roman Engel-Herbert
Summary: Exotic material properties and topological nontrivial surface states are theoretically predicted to emerge in [111]-oriented perovskite layers. However, the growth of perovskite oxide films along this crystallographic direction has been proven to be difficult due to the highly polar character of the perovskite (111) surface. Successful epitaxial growth of high-quality SrVO3(111) thin films was achieved by hybrid molecular beam epitaxy, opening up opportunities for studying transport properties of topological nontrivial and correlated electron systems.
Article
Chemistry, Multidisciplinary
Karol Olszewski, Marta Sobanska, Vladimir G. Dubrovskii, Egor D. Leshchenko, Aleksandra Wierzbicka, Zbigniew R. Zytkiewicz
Summary: This study focused on the growth of GaN nanowires on Si(111) substrates using plasma-assisted molecular beam epitaxy, specifically investigating the orientation and growth rate of the nanowires. The researchers found that vertically aligned nanowires grew faster and produced more regular ensembles compared to inclined nanowires. These densely packed ensembles of vertically aligned GaN nanowires on ZrN/Si(111) surfaces are highly relevant for device applications.
Article
Materials Science, Multidisciplinary
A. Adhikari, A. Wierzbicka, Z. Adamus, A. Lysak, P. Sybilski, D. Jarosz, E. Przezdziecka
Summary: This work investigates a series of CdO layers grown on the m-plane sapphire substrate using the plasma-assisted molecular beam epitaxy technique. The relation between Cd and O2 parameters during growth influences the stoichiometry and affects the morphological, optical, and electrical properties of the layers. Various characterization techniques were employed to study the surface morphology, structural properties, optical bandgap, and electrical parameters of the CdO layers.
Article
Nanoscience & Nanotechnology
Tobias Hadamek, Agham B. Posadas, Fatima Al-Quaiti, David J. Smith, Martha R. McCartney, Alexander A. Demkov
Summary: In this study, beta-Ga2O3 thin films were grown on a silicon surface using plasma-assisted molecular beam epitaxy at different temperatures. The structural characteristics of the films were analyzed through various testing methods, and atomistic models of gallia-alumina interfaces were proposed based on the results.
Article
Nanoscience & Nanotechnology
Youlin Xiong, Xining Zhang, Haolin Li, Jianwei Ding, Shuangfei Cai, Wei Zhang, Rong Yang
Summary: Here, we present a facile and effective strategy for the patterned growth of one-dimensional β-Ga2O3 nanowires on metallic substrates using liquid gallium as a precursor. By screen printing gallium on a metallic foil, an intermetallic phase is formed by alloying, and subsequent thermal treatment with sputtering Au induces the formation of β-Ga2O3 nanowires on the foil. The in situ growth of nanowires is maintained by the gallium in the intermetallic phase, and the growth process follows a classical vapor-liquid-solid mechanism dependent on Au sputtering and temperature. The convenient alloying at a moderately low temperature facilitates the synthesis of nanowires, and this approach is applicable to various metallic substrates and can be scaled up easily. Moreover, the β-Ga2O3 nanowires grown on Ag foil (β-Ga2O3/Ag) exhibit excellent photocatalytic performance and can be easily recovered for dye degradation, making them a promising candidate for environmental applications.
ACS APPLIED NANO MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Nan-Cho Oh, Jin-Gyu Lee, Yanqun Dong, Tae-Soo Kim, Hye-Jung Yu, Jung-Hoon Song
CURRENT APPLIED PHYSICS
(2015)
Article
Physics, Applied
Jengsu Yoo, Yoonsung Nam, Tae-Soo Kim, Gunwoo Jung, Jung-Hoon Song, Soo-Kyung Chang
JOURNAL OF APPLIED PHYSICS
(2020)
Article
Materials Science, Multidisciplinary
Kyuheon Kim, Gunwoo Jung, Jaesun Kim, Yujin Sung, Jaesang Kang, Wook-Jae Lee, Youngboo Moon, Tak Jeong, Jung-Hoon Song
Summary: This study systematically analyzes the correlation and detailed mechanism between photoluminescence and electroluminescence to provide a clear path for all-optical inspection of light emitting diodes.
Article
Chemistry, Analytical
Seungyoung Lim, Tae-Soo Kim, Jaesang Kang, Jaesun Kim, Minhyup Song, Hyun Deok Kim, Jung-Hoon Song
Summary: Trap states and defects near the active region in DUV LEDs were investigated using wavelength-dependent photocurrent spectroscopy. Anomalous photocurrent reversal and its temporal recovery were observed, with the recovery time showing strong temperature dependency. The presence of hole traps and band bending caused by piezoelectric polarization fields were proposed to explain these phenomena, with the activation energy of the defect state calculated to be 279 meV.
