Fundamental limits for near-junction conduction cooling of high power GaN-on-diamond devices

Published 2019 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Fundamental limits for near-junction conduction cooling of high power GaN-on-diamond devices
Authors
Keywords
A. GaN-on-diamond, D. Thermal conductivity, D. Thermal boundary resistance, D. Near-junction thermal transport
Journal
SOLID STATE COMMUNICATIONS
Volume 295, Issue -, Pages 12-15
Publisher
Elsevier BV
Online
2019-03-26
DOI
10.1016/j.ssc.2019.03.013

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.