Low voltage & controlled switching of MoS2-GO resistive layers based ReRAM for non-volatile memory applications

Published 2019 View Full Article

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Title
Low voltage & controlled switching of MoS2-GO resistive layers based ReRAM for non-volatile memory applications
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 34, Issue 8, Pages 085009
Publisher
IOP Publishing
Online
2019-06-25
DOI
10.1088/1361-6641/ab2c09

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