Journal
MATERIALS RESEARCH BULLETIN
Volume 115, Issue -, Pages 70-79Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2019.03.019
Keywords
Bi3TiNbO9; Crystal distortion; Piezoelectricity; Resistivity
Categories
Funding
- Key Program of National Natural Science Foundation of China [51332003]
- Sichuan Science and Technology Program [2018G20140]
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High-temperature piezoceramics Bi3-xCexTiNbO9+delta (BCTN-100x, x=0, 0.02, 0.04, 0.06, 0.07, 0.08, 0.10) were prepared by a solid-state reaction method. The crystal structure, microstructure, dielectric behaviour, piezoelectricity, temperature stability and electrical conduction mechanisms of BCTN-100x ceramics were studied. All Ce-doped Bi3TiNBO9 ceramics had a single Aurivillius phase structure. Ce substitution influenced the crystal structure, leading to a high piezoelectric constant (d(33) = 17 pC/N) but decreasing the Curie temperature slightly (T-C = 883 degrees C). The resistivity of Ce-doped BTN ceramics increased by two orders of magnitude compared with that of the pure BTN. Furthermore, the dc and ac conduction mechanisms were studied, indicating that the conduction mechanism is closely related to temperature for dc and ac conduction behaviour. In addition, we analysed the dielectric relaxation processes and attributed them to the motion of oxygen vacancies, which deviates from the ideal Debye-model.
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