Optoelectronic properties of Black-Silicon generated through inductively coupled plasma (ICP) processing for crystalline silicon solar cells

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Title
Optoelectronic properties of Black-Silicon generated through inductively coupled plasma (ICP) processing for crystalline silicon solar cells
Authors
Keywords
Black-Silicon, Plasma texturing, ICP, Self-bias, Ion bombardment, Reflection, Charge carrier lifetime
Journal
APPLIED SURFACE SCIENCE
Volume 374, Issue -, Pages 252-256
Publisher
Elsevier BV
Online
2015-11-30
DOI
10.1016/j.apsusc.2015.11.241

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