4.7 Article

Morphology dependent field emission characteristics of ZnS/silicon nanoporous pillar array

Journal

APPLIED SURFACE SCIENCE
Volume 384, Issue -, Pages 530-533

Publisher

ELSEVIER
DOI: 10.1016/j.apsusc.2016.05.104

Keywords

Zinc sulphides (ZnS); Silicon nanoporous pillar array (Si-NPA); Field emission (FE)

Funding

  1. National Natural Science Foundation of China [61176044, 11405148]
  2. Frontier Technology Research and Development Program of Zhengzhou [141PQYJS552]
  3. Science and Technology Research Projects of Education Department of Henan Province [14B140017]

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Through depositing zinc sulphide (ZnS) nanoparticals on silicon nanoporous pillar array (Si-NPA) and crater-shaped silicon nanoporous pillar array (c-Si-NPA) by chemical bath deposition (CBD) method, ZnS/Si-NPA and c-ZnS/Si-NPA were prepared and the field emission (FE) properties of them were investigated. The turn-on electric fields of were 3.8 V/mm for ZnS/Si-NPA and 5.0 V/mm for c-ZnS/Si-NPA, respectively. The lower turn-on electric fields of ZnS/Si-NPA than that of c-ZnS/Si-NPA were attributed to the different electric distribution of the field emitters causing by the different surface morphology of the two samples, which was further demonstrated via the simulated results by finite element modeling. The FN curves for the ZnS/Si-NPA showed two-slope behavior. All the results indicate that the morphology play an important role in the FE properties and designing an appropriate top morphology for the emitter is a very efficient way to improve the FE performance. (C) 2016 Elsevier B.V. All rights reserved.

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