Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

Published 2016 View Full Article

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Title
Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure
Authors
Keywords
Oxygen atomic layer, Ozone, Silicon, Si-O superlattice, Low temperature epitaxy, Chemical vapor deposition
Journal
APPLIED SURFACE SCIENCE
Volume 384, Issue -, Pages 152-160
Publisher
Elsevier BV
Online
2016-05-08
DOI
10.1016/j.apsusc.2016.04.137

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