Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 10, Issue 14, Pages 4025-4031Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.9b01649
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Funding
- China Scholarship Council [201606340161]
- Deutsche Forschungsgemeinschaft (DFG) within the Cluster of Excellence Center for Advancing Electronics Dresden (cfAED)
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We demonstrate high-mobility solution-processed inorganic field-effect transistors (FETs) with ultra-short channel (USC) length using semiconductor CdSe nanocrystals (NCs). Capping of the NCs with hybrid inorganic organic CdCl3--butylamine ligands enables coarsening of the NCs during annealing at a moderate temperature, resulting in the devices having good transport characteristics with electron mobilities in the saturation regime reaching 8 cm(2) V-1 s(-1) Solution-based processing of the NCs and fabrication of thin films involve neither harsh conditions nor the use of hydrazine. Employing photolithographic methods, we fabricated FETs with a vertical overlap of source and drain electrodes to achieve a submicrometer channel length. To the best of our knowledge, this is the first report on an USC FET based on colloidal semiconductor NCs. Because of a short channel length, the FETs show a normalized transconductance of 4.2 m V-1 s(-1) with a high on/off ratio of 10(5).
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