Journal
JOURNAL OF CRYSTAL GROWTH
Volume 517, Issue -, Pages 7-11Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2019.04.003
Keywords
Bismuth Selenoiodide (BiSeI); Physical vapor transport; Strip-shaped; Anisotropic
Funding
- National Natural Science Foundations of China [51872228, U1631116, 51802262]
- National Key Research and Development Program of China [2016YFE0115200]
- Natural Science Basic Research Plan in Shaanxi Province of China [2017KW-029]
- Fundamental Research Funds for the Central Universities [3102017zy057, 3102018jcc036]
- MIIT [MJ-2017-F-05]
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On the purpose to get large sized BiSeI crystals for diverse applications based on its physical properties, such as thermoelectric, photoelectric and ferroelectric, etc. We developed a synthesis process to obtain pure BiSeI polycrystal, which was used as source material for further physical vapor transport (PVT) growth of BiSeI single crystal. Strip-shaped BiSeI single crystal with the size of similar to 80 x 4 x 0.5 mm(3) was obtained. Needle-like and layered microstructures with homogeneous composition were observed in BiSeI crystal by the SEM. The band-gap of as-grown BiSeI crystal was estimated to be similar to 1.29 eV according to the UV-Vis diffuse reflectance spectra. Hall measurement shows that BiSeI single crystal is n-type conductivity with the anisotropic resistivity of 39.3, 3.4, and 1650.4 Omega.cm along a-, b- and c-axis, respectively.
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