Low-noise epitaxial graphene on SiC Hall effect element for commercial applications
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Title
Low-noise epitaxial graphene on SiC Hall effect element for commercial applications
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 22, Pages 223504
Publisher
AIP Publishing
Online
2016-06-07
DOI
10.1063/1.4953258
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Related references
Note: Only part of the references are listed.- Charge carrier concentration and offset voltage in quasi-free-standing monolayer chemical vapor deposition graphene on SiC
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- (2014) Jagoda Sławińska et al. CARBON
- Magnetic scanning gate microscopy of graphene Hall devices (invited)
- (2014) R. K. Rajkumar et al. JOURNAL OF APPLIED PHYSICS
- Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC
- (2014) Tymoteusz Ciuk et al. JOURNAL OF APPLIED PHYSICS
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- (2014) Samir Mammadov et al. 2D Materials
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- (2013) Huilong Xu et al. APPLIED PHYSICS LETTERS
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- (2012) V. Panchal et al. JOURNAL OF APPLIED PHYSICS
- Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces
- (2012) T. Schumann et al. PHYSICAL REVIEW B
- Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide
- (2012) J. Ristein et al. PHYSICAL REVIEW LETTERS
- Characteristics of a sensitive micro-Hall probe fabricated on chemical vapor deposited graphene over the temperature range from liquid-helium to room temperature
- (2011) Chiu-Chun Tang et al. APPLIED PHYSICS LETTERS
- Graphene Epitaxy by Chemical Vapor Deposition on SiC
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- Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms
- (2010) S Rumyantsev et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Probing the electrical anisotropy of multilayer graphene on the Si face of6H-SiC
- (2010) B. Jouault et al. PHYSICAL REVIEW B
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