Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4958738
Keywords
-
Categories
Funding
- National Natural Science Foundation of China [61274019, 61505132, 11661131002]
- Collaborative Innovation Center of Suzhou Nano Science and Technology
- Qing Lan Project of Jiangsu Province
- Natural Science Foundation of Jiangsu Province [BK20130318]
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
Ask authors/readers for more resources
High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention. Published by AIP Publishing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available