4.6 Article

High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

Journal

APPLIED PHYSICS LETTERS
Volume 108, Issue 19, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4948692

Keywords

-

Funding

  1. Specially Promoted Research, the Project for Developing Innovation Systems of MEXT
  2. Spintronics Research Network of Japan (Spin-RNJ)
  3. JSPS [P15362]
  4. Yazaki Memorial Foundation for Science and Technology
  5. Iketani Science and Technology Foundation
  6. Toray Science Foundation
  7. JSPS Fellowship for Young Scientists (KAKENHI Grant) [257388]
  8. Program for Leading Graduate Schools (MERIT)
  9. Grants-in-Aid for Scientific Research [16K14224, 15F15362, 23000010, 15H03988, 16H02095] Funding Source: KAKEN

Ask authors/readers for more resources

We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga1-x,Fe-x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300K and 340K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors. Published by AIP Publishing.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available