Site-selection of Si1−xGex quantum dots on patterned Si(001) substrates

SiGe quantum dot crystals with periods down to 35 nm

(2015) C Dais et al.   NANOTECHNOLOGY

Growth of quantum dots on pit-patterns

(2015) Jean-Noël Aqua et al.   SURFACE SCIENCE

Highly uniform arrays of epitaxial Ge quantum dots with interdot spacing of 50 nm

(2014) Christopher J. Duska et al.   JOURNAL OF MATERIALS RESEARCH

Directed self-organization of quantum dots

(2014) Jean-Noël Aqua et al.   PHYSICAL REVIEW E

Ge1−xMnx heteroepitaxial quantum dots: Growth, morphology, and magnetism

(2013) J. Kassim et al.   JOURNAL OF APPLIED PHYSICS

Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates

(2013) Martyna Grydlik et al.   NANOTECHNOLOGY

Growth kinetics in a strained crystal film on a wavy patterned substrate

(2012) X Xu et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

How pit facet inclination drives heteroepitaxial island positioning on patterned substrates

(2011) G. Vastola et al.   PHYSICAL REVIEW B

Role of the wetting layer for the SiGe Stranski–Krastanow island growth on planar and pit-patterned substrates

(2010) J J Zhang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Study of growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on nanometer-scale patterned SiO2/Si(001) substrates

(2009) Tae-Sik Yoon et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Enhanced Relaxation and Intermixing in Ge Islands Grown on Pit-Patterned Si(001) Substrates

(2009) T. U. Schülli et al.   PHYSICAL REVIEW LETTERS

Understanding the elastic relaxation mechanisms of strain in Ge islands on pit-patterned Si(001) substrates

(2008) G Vastola et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Self-assembly and ordering mechanisms of Ge islands on prepatterned Si(001)

(2008) A. Pascale et al.   PHYSICAL REVIEW B

Theory of Directed Nucleation of Strained Islands on Patterned Substrates

(2008) Hao Hu et al.   PHYSICAL REVIEW LETTERS