Enhancement-mode operation of multilayer MoS2 transistors with a fluoropolymer gate dielectric layer

Enhancement-mode multilayer molybdenum disulfide (MoS2) field-effect transistors (FETs), which are an immensely important component toward low-power electronics based on a two-dimensional layered semiconductor, are demonstrated using the fluoropolymer CYTOP as a gate dielectric. The fabricated devices exhibit threshold voltage (V-TH) of similar to 5.7V with field-effect mobility (mu(FE)) of up to 82.3 cm(2)/V s, and the characteristics are compared with the depletion-mode characteristics of MoS2 FETs with the cross-linked Poly(4-vinylphenol) gate dielectric (V-TH similar to -7.8 V). UV photoelectron spectroscopy analysis indicates that increased surface potential due to the surface dipole effect of the fluorine group influences the positive V-TH shift. Published by AIP Publishing.