Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4947445
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Funding
- DSM-Energie NANIPHO Project
- Marie Curie IEF grant SolarIn [331745]
- French National Research Agency via the GANEX Program [ANR-11-LABX-0014]
- XDISPE Project [ANR-11-JS10-004-01]
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We investigate the photovoltaic performance of pseudomorphic In0.1Ga0.9N/GaN multiple-quantum well (MQW) solar cells as a function of the total active region thickness. An increase in the number of wells from 5 to 40 improves the short-circuit current and the open-circuit voltage, resulting in a 10-fold enhancement of the overall conversion efficiency. Further increasing the number of wells leads to carrier collection losses due to an incomplete depletion of the active region. Capacitance-voltage measurements point to a hole diffusion length of 48 nm in the MQW region. Published by AIP Publishing.
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