Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4966999
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Funding
- Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), Next-generation power electronics - NEDO
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The channel temperature (T-ch) and thermal resistance (R-th) of Ga2O3 metal-oxide-semiconductor field-effect transistors were investigated through electrical measurements complemented by electrothermal device simulations that incorporated experimental Ga2O3 thermal parameters. The analysis technique was based on a comparison between DC and pulsed drain currents (I-DS) at known applied biases, where negligible self-heating under pulsed conditions enabled approximation of T-ch to the ambient temperature (T-amb) and hence correlation of I-DS to T-ch. Validation of the device model was achieved through calibration against the DC data. The experimental T-ch was in good agreement with simulations for T-amb between 20 degrees C and 175 degrees C. A large R-th of 48 mm.K/W thus extracted at room temperature highlights the value of thermal analysis for understanding the degradation mechanisms and improving the reliability of Ga2O3 power devices. Published by AIP Publishing.
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