Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 24, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.4954166
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Funding
- Shiv Nadar University
- Department of Science and Technology, India [DST/EMR/2014/000971]
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The variation of electron density in TiO2-x nanochannels, exhibiting resistive switching phenomenon, produced by Ar+ ion-irradiation at the threshold fluence of 5 x 10(16) ions/cm2 is demonstrated by X-ray reflectivity (XRR). The transmission electron microscopy reveals the formation of nanochannels, while the energy dispersive X-ray spectroscopy confirms Ti enrichment near the surface due to ion-irradiation, in consistent with the increase in electron density by XRR measurements. Such a variation in Ti concentration indicates the evolution of oxygen vacancies (OVs) along the TiO2-x nanochannels, and thus paves the way to explain the operation and performance of the Pt/TiO2-x/Pt-based memory devices via OV migration. Published by AIP Publishing.
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