Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4960523
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Funding
- National Key Research Programme of China [2016YFA0300101, 2016YFA0201004]
- National Natural Science Foundation of China [51301084, 51431006, 11374112]
- Natural Science Foundation of Jiangsu, China [BK20130576]
- Hong Kong NSFC/RGC grant [N-PolyU517/14]
- Strategic Importance Project of The Hong Kong Polytechnic University [1-ZE25]
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Complementary resistive switching (CRS) has potential applications in ultra-high density three-dimensional crossbar arrays for resistive random access memories and Logic-in-Memories. For real applications, the good stability and electroforming-free character have become essential prerequisites. In this work, we investigate the resistance switching behaviors of a CRS device based on two anti-serial Au/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junctions (FTJs). This FTJ-based CRS device shows a stable butterfly-like resistance-voltage hysteresis, as well as self-electroforming, multi-switching, and good performance complementary switching behaviors. The present work presents a convincing demonstration of the complementary multi-switching states modulated by remnant ferroelectric polarization, making the FTJ structure good potentials for high-performance CRS memristors. Published by AIP Publishing.
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