Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4967475
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Funding
- RAMP
- D Project for ICT Key Technology to Realize Future Society of MEXT
- ImPACT Program of CSTI
- JSPS KAKENHI [15J04691]
- Grants-in-Aid for Scientific Research [15J04691] Funding Source: KAKEN
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We study the spin-orbit torque induced magnetization switching in W/CoFeB/MgO heterostructures with W deposited under different sputtering conditions. We show that the crystal structure and resistivity of W depend on the employed sputtering conditions. Switching current of nanoscale devices is smaller while effective anisotropy field is larger for the devices with more resistive W channel deposited at lower sputtering power and higher Ar gas pressure. The effective spin Hall angle evaluated from the switching probability varies by a factor of 2-3 depending on the W resistivity controlled by the sputtering conditions. Published by AIP Publishing.
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