Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4944847
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Funding
- National Science Foundation
- NSF [DMR-1206919, ECCS-1253720]
- Center for Functional Nanomaterials, U.S. DOE Office of Science Facility, at Brookhaven National Laboratory [DE-SC0012704]
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We report substantial improvement of near-infrared (2-2.6 mu m) intersubband absorption in c-plane AlInN/GaN superlattices grown by molecular beam epitaxy. Progress was obtained through optimization of AlInN growth conditions using an AlInN growth rate of 0.9-nm/min at substrate temperature of 550 degrees C, as well as by judiciously placing the charge into two delta-doping sheets. Structural characterization suggests that AlInN crystal quality is enhanced and interface roughness is reduced. Importantly, near-infrared absorption data indicate that the optical quality of the AlInN/GaN superlattices is now comparable with that of AlN/GaN superlattices designed to exploit near-infrared intersubband transitions. (C) 2016 AIP Publishing LLC.
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