Type-II recombination dynamics of tensile-strained GaP quantum dots in GaAs grown by droplet epitaxy

Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A

(2014) Neul Ha et al.   APPLIED PHYSICS LETTERS

Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain

(2013) Paul J. Simmonds et al.   ACS Nano

Tensile-strained growth on low-index GaAs

(2012) Paul J. Simmonds et al.   JOURNAL OF APPLIED PHYSICS

Geometrical impact on the optical polarization of droplet epitaxial quantum dots

(2012) Yu-Huai Liao et al.   PHYSICAL REVIEW B

Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates: Suppression of Fine-Structure Splitting

(2010) Takaaki Mano et al.   Applied Physics Express

Self-assembled GaAs islands on Si by droplet epitaxy

(2010) C. Somaschini et al.   APPLIED PHYSICS LETTERS

Tensile strained island growth at step-edges on GaAs(110)

(2010) P. J. Simmonds et al.   APPLIED PHYSICS LETTERS

Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

(2010) Shih-Yen Lin et al.   APPLIED PHYSICS LETTERS

Electron delocalization of tensily strained GaAs quantum dots in GaSb matrix

(2010) T. C. Lin et al.   JOURNAL OF APPLIED PHYSICS

Optical properties of GaSb/GaAs type-ІІ quantum dots grown by droplet epitaxy

(2009) Takuya Kawazu et al.   APPLIED PHYSICS LETTERS

Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy

(2009) T Mano et al.   NANOTECHNOLOGY

Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires

(2008) B. Pal et al.   APPLIED PHYSICS LETTERS