Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing
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Title
Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 10, Pages 101905
Publisher
AIP Publishing
Online
2016-03-08
DOI
10.1063/1.4943193
References
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Related references
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- (2012) Stefan Lundqvist et al. APPLIED OPTICS
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- (2012) C. S. Kim et al. APPLIED PHYSICS LETTERS
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- (2011) M Motyka et al. MEASUREMENT SCIENCE and TECHNOLOGY
- Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption
- (2011) I. Vurgaftman et al. Nature Communications
- Fast Differential Reflectance Spectroscopy of Semiconductor Structures for Infrared Applications by Using Fourier Transform Spectrometer
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- Current status of midinfrared quantum and interband cascade lasers for clinical breath analysis
- (2010) Frank K. Tittel OPTICAL ENGINEERING
- Mid-infrared semiconductor heterostructure lasers for gas sensing applications
- (2010) A Bauer et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells
- (2009) Marcin Motyka et al. Applied Physics Express
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