Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4941229
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- Department of Science and Technology (DST), Government of India [SR/NM/NS-1502/2014]
- CSIR, Government of India
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We report the electron transport properties of epitaxial graphene (EG) grown on 4H-SiC (0001) by low energy electron-beam irradiation. As-grown EG (AEG) on SiC interface exhibits rectifying current-voltage characteristics with a low Schottky barrier (SB) of 0.55 +/- 0.05 eV and high reverse current leakage. The SB of AEG/SiC junction is extremely impeded by the Fermi level pinning (FLP) above the Dirac point due to charged states at the interface. Nevertheless, a gentle hydrogen intercalation at 900 degrees C enables the alleviation of both FLP and carrier scattering owing to the saturation of dangling bonds as evidenced by the enhancement of SB (0.75 +/- 0.05 eV) and high electron mobility well excess of 6000 cm(2) V-1 s(-1). (C) 2016 AIP Publishing LLC.
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