Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4950997
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Funding
- Industry Technology R&D program of MOTIE/KEIT [10050501]
- Basic Science Research Program through National Research Foundation of Korea (NRF)
- Ministry of Education [2015R1D1A4A01020731]
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The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar+ ion beam, we cleaned the polymer residue without damaging the graphene network. HfO2 grown by atomic layer deposition on graphene cleaned using an Ar+ ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar+ ion cleaning) showed a non-uniform structure. A graphene-HfO2-metal capacitor fabricated by growing 20-nm thick HfO2 on graphene exhibited a very low leakage current (< 10(-11) A/cm(2)) for Ar+ ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current. Published by AIP Publishing.
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