Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4952596
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- DARPA
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Full-wafer stress mapping is accomplished using visible and ultraviolet (UV) micro-Raman spectroscopy of a 730-nm thick GaN layer integrated with diamond grown by chemical vapor deposition. The UV measurements taken from both sides of the wafer reveal a higher tensile stress of 0.86 +/- 0.07 GPa at the free GaN surface compared to 0.23 +/- 0.06 GPa from the GaN/diamond interface, each with good cross-wafer uniformity. Factors influencing the overall stress and stress gradient are understood based on relaxation from dislocations in the GaN which vary in density along the growth direction. Simulations incorporating a model for stress relaxation in the GaN elastic modulus adequately describe the observed dependence. Published by AIP Publishing.
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