Article
Engineering, Electrical & Electronic
Arathy Varghese, Chinnamuthan Periasamy, Lava Bhargava, Surani Bin Dolmanan, Sudhiranjan Tripathy
Summary: The research involves the development of a C-MOSHEMT sensor for pH detection application, with modeling, fabrication, and sensitivity analysis conducted. Experimental results show the impact of increasing sensing area on sensitivity.
IEEE SENSORS JOURNAL
(2021)
Article
Engineering, Electrical & Electronic
Minghua Zhu, Catherine Erine, Jun Ma, Mohammad Samizadeh Nikoo, Luca Nela, Pirouz Sohi, Elison Matioli
Summary: This letter presents a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs, utilizing the combination of p-GaN, tri-gate, and MOS structures to achieve high threshold voltage and low on-resistance. The design enables excellent channel control capability, higher ON/OFF ratio, and smaller sub-threshold slope compared to similar planar p-GaN devices, showcasing promising prospects for future power electronics applications.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Physics, Multidisciplinary
Bo Wang, Peng Ding, Rui-Ze Feng, Shu-Rui Cao, Hao-Miao Wei, Tong Liu, Xiao-Yu Liu, Hai-Ou Li, Zhi Jin
Summary: A double-recessed offset gate process technology for InP-based HEMTs was developed in this paper. The double-recessed HEMTs achieved higher maximum oscillation frequency by reducing drain output conductance and drain to gate capacitance.
Article
Engineering, Electrical & Electronic
Taifang Wang, Yuan Zong, Luca Nela, Elison Matioli
Summary: This work demonstrates the potential of p-type LiNiO for high-performance enhancement-mode multi-channel GaN transistors, achieving a more positive threshold voltage and excellent on-state performance by using LiNiO in the tri-gates to form a multi-channel junction gate structure.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Ching-Hong Chang, Yue-Chang Lin, Jing-Shiuan Niu, Wen-Shiung Lour, Jung-Hui Tsai, Wen-Chau Liu
Summary: This study presents an AlGaN/GaN enhancement-mode HEMT fabricated with a two-step gate recess and electroless plating method. The EP-HEMT shows improved performance compared to a traditional HEMT, with higher drain saturation current, transconductance, lower gate leakage current, and higher ON/OFF drain current ratio.
SCIENCE OF ADVANCED MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Hrit Mukherjee, Mousiki Kar, Atanu Kundu
Summary: Comparing the analog/radiofrequency and power performance of a quaternary InAlGaN MOS-HEMT and a ternary AlGaN MOS-HEMT with the same structure, the former shows superior performance for high-frequency amplifiers. By varying the thickness of the barrier layer, it is found that the thinner-quaternary MOS-HEMT exhibits better performance in sophisticated high-power devices.
JOURNAL OF ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Byoung-Gue Min, Jong-Min Lee, Hyung Sup Yoon, Woo-Jin Chang, Jong-Yul Park, Dong Min Kang, Sung-Jae Chang, Hyun-Wook Jung
Summary: We have developed a fabrication process for InAlAs/InGaAs metamorphic high electron mobility transistor devices, allowing for adjustable gate length to suit specific applications. Key processes include a two-step electron-beam lithography process with a three-layer resist and a gate recess etching process using citric acid. By optimizing the etching conditions, we were able to successfully manufacture various monolithic microwave integrated circuits.
Article
Physics, Condensed Matter
V Sandeep, J. Charles Pravin
Summary: The impact of graded Al0.05Ga0.95N sub-channel on the DC characteristics of AlGaN/GaN/AlInN MOS-HEMT was investigated through TCAD simulation, analyzing various device and RF parameters. The results showed that the T-gated structure enhanced the breakdown voltage of the device and the linearity improvement was achieved through the graded AlGaN sub-channel.
SUPERLATTICES AND MICROSTRUCTURES
(2021)
Article
Physics, Multidisciplinary
Shurui Cao, Ruize Feng, Bo Wang, Tong Liu, Peng Ding, Zhi Jin
Summary: A set of 100-nm gate-length InP-based HEMTs were designed and fabricated with different gate offsets using electron beam lithography. DC and RF measurements were conducted, and the results showed that the gate offset variation led to an increase in maximum drain current and transconductance, a decrease in f(T), and an increase in f(max). Furthermore, gate offset towards the source side suppressed the output conductance.
Article
Physics, Multidisciplinary
Ruize Feng, Bo Wang, Shurui Cao, Tong Liu, Yongbo Su, Wuchang Ding, Peng Ding, Zhi Jin
Summary: A set of symmetric gate-recess devices with a gate length of 70 nm were fabricated, showing various performance changes with different gate-recess lengths obtained through process improvement. Decreasing gate-recess length led to an increase in maximum saturation current density and maximum transconductance, while increasing gate-recess length resulted in a higher frequency response.
Article
Chemistry, Physical
Soumen Mazumder, Parthasarathi Pal, Kuan-Wei Lee, Yeong-Her Wang
Summary: The study demonstrated the performance of an Al2O3/SiO2 stack layer AlGaN/GaN metal-oxide semiconductor high-electron-mobility transistor with a dual surface treatment using TMAH and HCl, along with post-gate annealing modulation. The dual surface-treated MOS-HEMT showed significant improvements in hysteresis, gate leakage, and subthreshold characteristics by optimizing gate annealing treatment.
Article
Engineering, Electrical & Electronic
Roshan Sharma, Akash Patnaik, Pankaj Sharma
Summary: In this study, TCAD simulations were performed to investigate the effects of varying doping concentration and recess gate on the enhancement mode operation of /3-Ga2O3 MOSFETs. Lowering the doping concentration reduced the threshold voltage to 0V, enabling enhancement mode operation but leading to significantly reduced drain current. The addition of a Si3N4 passivation layer further increased the breakdown voltage. These findings are important for the development and design of enhancement mode /3-Ga2O3 MOSFETs for high power and high voltage applications.
MICROELECTRONICS JOURNAL
(2023)
Article
Chemistry, Analytical
Seong-Kun Cho, Won-Ju Cho
Summary: This study developed a pH sensor platform based on AlGaN/GaN MOS HEMT, overcoming the sensitivity limitation of conventional ISFETs through resistive coupling. Amplification of pH sensitivity was achieved by controlling the series resistance connected to CG and SG, while the use of a disposable extended gate helped prevent damages. The pH sensor exhibited considerably higher sensitivity compared to the Nernst limit, showing excellent reliability and stability.
Article
Engineering, Electrical & Electronic
Kuan Ning Huang, Yueh Chin Lin, Chieh Ying Wu, Jin Hwa Lee, Chia Chieh Hsu, Jing Neng Yao, Chao Hsin Chien, Edward Yi Chang
Summary: In this study, an enhancement-mode p-GaN MOS-HEMT with a 10-nm-thick Al2O3 film was fabricated successfully. The Al2O3 film exhibited good quality and the Al2O3/p-GaN MOS interface showed excellent properties. Compared to a p-GaN gate, the HEMT with Al2O3 gate insulator showed higher threshold voltage of 2.1 V and comparable maximum drain current of 217 mA/mm. Additionally, the p-GaN gate MOS-HEMT with Al2O3 demonstrated lower gate leakage current and higher breakdown voltage, thanks to the high-energy bandgap and high breakdown field of Al2O3. These findings suggest the promising application of p-GaN gate MOS-HEMT with Al2O3 gate insulator in high-power devices.
JOURNAL OF ELECTRONIC MATERIALS
(2023)
Article
Chemistry, Physical
Shun-Kai Yang, Soumen Mazumder, Zhan-Gao Wu, Yeong-Her Wang
Summary: In this study, the addition of aluminum into HfO2 improved the crystalline temperature and device performance of HfAlOX, while reducing the gate leakage current through N-2 plasma treatment. This approach showed promising results in enhancing the performance of MOS-HEMT devices.
Article
Nanoscience & Nanotechnology
Tanmoy Kumar Paul, Quazi Deen Mohd Khosru
Article
Engineering, Electrical & Electronic
Md. Irfan Khan, I. K. M. Reaz Rahman, Quazi D. M. Khosru
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
I. K. M. Reaz Rahman, Md. Irfan Khan, Quazi D. M. Khosru
Summary: This paper presents an analytical investigation of the electrostatic properties of a moderately doped symmetric gate-all-around nanowire MOSFET with InGaAs channel. The model covers depletion to strong inversion regime continuously, facilitating the determination of mobile charge density and capacitance-voltage characteristics. By incorporating various physical parameters and material properties, the threshold voltage model accurately predicts the threshold voltage variation, highlighting the potential for further improvement in electrostatics.
JOURNAL OF COMPUTATIONAL ELECTRONICS
(2021)
Article
Nanoscience & Nanotechnology
I. K. M. Reaz Rahman, Md. Irfan Khan, Quazi D. M. Khosru
Summary: This paper presents an analytical investigation of the drain current model for symmetric short channel InGaAs gate-all-around (GAA) MOSFETs valid from depletion to strong inversion using a continuous expression. The core model development is facilitated by solving the quasi-2D Poisson equation in the doped channel, accounting for interface trap defects and fixed oxide charges.
Article
Physics, Applied
I. K. M. Reaz Rahman, Shiekh Zia Uddin, Hyungjin Kim, Naoki Higashitarumizu, Ali Javey
Summary: Low power silicon based light source and detector are attractive for on-chip photonic circuits. However, conventional silicon light emitting diodes have limited responsivity for silicon photodetectors, and previous hot carrier electroluminescent silicon devices require high operating voltages. In this study, we investigated hot carrier electroluminescence in silicon metal-oxide-semiconductor capacitors operating under transient voltage conditions, and achieved low voltage operation by utilizing appropriate voltage transients.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Applied
Xinyi Xia, Jian-Sian Li, Md Irfan Khan, Kamruzzaman Khan, Elaheh Ahmadi, David C. Hays, Fan Ren, S. J. Pearton
Summary: The band alignments of SiO2 and Al2O3, two potential dielectric materials for ScAlN, were investigated using x-ray photoelectron spectroscopy. The deposition method was found to significantly affect the valence band offsets of SiO2 and Al2O3 films on ScAlN, indicating their potential as gate dielectrics for transistor structures.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Chemistry, Multidisciplinary
I. K. M. Reaz Rahman, Shiekh Zia Uddin, Matthew Yeh, Naoki Higashitarumizu, Jongchan Kim, Quanwei Li, Hyeonjun Lee, Kyuho Lee, Hoyeon Kim, Cheolmin Park, Jaehoon Lim, Joel W. Ager III, Ali Javey
Summary: In this study, a metal-oxide-semiconductor capacitor based on CdSe/CdS quantum dot thin films was used to investigate the influence of background charge on the luminescence efficiency and lifetime. By applying a gate voltage, the concentration ratio of charged and neutral quasiparticles in the quantum dots can be controlled, leading to modulation of the photoluminescence intensity and effective lifetime. The findings have potential applications in voltage-controlled electrochromics.
