Simulation of GeSn/Ge tunneling field-effect transistors for complementary logic applications

Published 2016 View Full Article

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Title
Simulation of GeSn/Ge tunneling field-effect transistors for complementary logic applications
Authors
Keywords
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Journal
Applied Physics Express
Volume 9, Issue 9, Pages 091301
Publisher
Japan Society of Applied Physics
Online
2016-08-04
DOI
10.7567/apex.9.091301

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