Journal
CHEMICAL ENGINEERING JOURNAL
Volume 366, Issue -, Pages 305-312Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.cej.2019.02.062
Keywords
Transparency; Photovoltaic conversion; P-n junction; ZnO quantum dots
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Funding
- Natural Science Foundation of China [51672249, 51802282, 11804301]
- Zhejiang Provincial Natural Science Foundation of China [LQ17F040004]
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The SnO/ZnO QDs/SnO2 p-n junction is prepared via a simple route of continuous sputtering process and liquid phase synthesis method. The transparence and photoelectric conversion of these devices are investigated, which exhibits a high transmittance of about similar to 80% and an obvious photoelectric conversion enhancement of about similar to 100 times than that of the unmodified p-n junction, that could be mainly attributed to the ZnO QDs, including the unique band gap could provide an efficient photon-generated carrier route and high quantum yield could increase the photon-generated electron.
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