High Aspect Ratio β-Ga2O3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching

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Title
High Aspect Ratio β-Ga2O3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching
Authors
Keywords
-
Journal
ACS Nano
Volume -, Issue -, Pages -
Publisher
American Chemical Society (ACS)
Online
2019-06-18
DOI
10.1021/acsnano.9b01709

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