Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 11, Issue 35, Pages 31851-31859Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b08946
Keywords
Cu2ZnSn(S,Se)(4); solar cells; back surface field; p-MoSe2:Nb; carrier recombination; shunt resistance; series resistance
Funding
- National Natural Science Foundation of China [61774075]
- Science and Technology Development Project of Jilin Province [20170101142JC]
- Natural Science Foundation of Jilin Province [20180101227JC]
- High Performance Computing Center of Jilin University, China
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Cu2ZnSn(S,Se)(4) (CZTSSe) thin-film solar cells have been encountering a bottleneck period since the champion power conversion efficiency (PCE) of 12.7% was achieved by Kim et al. in 2014. One of the critical factors that impede its further development is the relatively low open-circuit voltage (V-OC) caused by serious interface carrier recombination. In this regard, back surface field (BSF) employment is a feasible strategy to address the V-OC issue of CZTSSe solar cells to some extent. Here, we demonstrated a self-organized BSF introduced by prompting interfacial MoSe2 layer transition from inherent n-type to desirable p-type with Nb doping (p-MoSe2:Nb). The BSF application can significantly reduce the carrier recombination at the back electrode interface (BEI) and lower down the back contact barrier height. The PCE of the corresponding cell was improved from 4.72 to 7.15% because of the enhancement of V-OC and fill factor, primarily stemming from the doubling aspects of increased shunt resistance (R-Sh), decreased series resistance (R-S), and alleviative recombination velocity of the BEI induced by the BSF. Our results suggest that introducing a BSF fulfilled with p-MoSe2:Nb is a facile and promising route to improve the performance of CZTSSe thin-film solar cells.
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