Article
Chemistry, Multidisciplinary
Xinshui Zhang, Cong Wu, Yinjie Lv, Yue Zhang, Wei Liu
Summary: In this work, a flexible polymeric memristor using polyethylenimine incorporated with silver salt is reported, demonstrating superior performances and stability for the construction of flexible electronics.
Article
Multidisciplinary Sciences
Shaobo Cheng, Min-Han Lee, Xing Li, Lorenzo Fratino, Federico Tesler, Myung-Geun Han, Javier Del Valle, R. C. Dynes, Marcelo J. Rozenberg, Ivan K. Schuller, Yimei Zhu
Summary: Vanadium dioxide (VO2) is capable of metal-insulator transition and resistive switching, making it suitable for neuromorphic computing hardware. This study reveals the mechanisms of both volatile and nonvolatile switching in VO2, which can emulate neuronal and synaptic behaviors, respectively, providing a comprehensive understanding of resistive switching crucial for neuromorphic computing development.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
(2021)
Article
Chemistry, Physical
Kaijin Kang, Wei Hu, Xiaosheng Tang
Summary: This Perspective provides a condensed overview of halide perovskite RRAMs, including materials, device performance, switching mechanism, and potential applications. The challenges of halide perovskite films, device fabrication, memory performance reliability, and understanding of switching mechanism are discussed, along with potential paths for future research.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Qi Xue, Yan Peng, Liang Cao, Yuanyuan Xia, Jianghu Liang, Chun-Chao Chen, Ming Li, Tao Hang
Summary: This study investigates the reliability issues of resistive random-access memory (RRAM) and presents a novel approach using a Ni nanocone array integrated with a resistive switching device. The nanocone-array-based memristor exhibits superior switching performance and a controllable conductive filament growth process, leading to improved reliability and performance.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Physical
Yiming Yuan, Yuchan Wang, Wenxia Zhang, Fei Qi, Xiaosheng Tang, Zhen Wang
Summary: In this study, lead-free all-inorganic Cs3Sb2I9 perovskites with high stability were successfully fabricated via a low-temperature hydrochloric acid assisted solution method. The perovskite-based memory devices showed typical bipolar resistive switching behavior with high ON/OFF ratio, low operating voltage, excellent endurance property, and long data retention. Moreover, the devices demonstrated outstanding mechanical stability under different bending angles and consecutive bending cycles. This work provides insights into the characteristics of low operating voltage and high stability resistive switching behavior of all-inorganic perovskites, highlighting their great potential in next-generation low power consumption non-volatile flexible memory devices.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Chemistry, Multidisciplinary
Xiaomin Liu, Shuxia Ren, Zhenhua Li, Jiajun Guo, Shenghui Yi, Zheng Yang, Weizhong Hao, Rui Li, Jinjin Zhao
Summary: The introduction of CsPbBr3 quantum dots mixed in graphene oxide for flexible transparent RRAM devices shows a high ON/OFF ratio under illumination, with little impact on resistances from bending or load-cycling. This innovative resistive memory technology opens up possibilities for the development of photoelectrical dual-controlled flexible RRAM devices.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Multidisciplinary Sciences
Kyunghwan Min, Dongmyung Jung, Yongwoo Kwon
Summary: This study presents simulations of conductive filament formation in resistive random-access memory using a finite element solver, considering the switching material as a two-phase material. The research focuses on studying the forming-voltage uniformity and finding that a protruding electrode can significantly improve the switching uniformity.
SCIENTIFIC REPORTS
(2021)
Article
Nanoscience & Nanotechnology
Kena Zhang, Panchapakesan Ganesh, Ye Cao
Summary: Recent experimental works have shown that embedding metal nano-islands (NIs) in metal oxides can effectively improve the uniformity of memristors. A physical model was developed to understand the role of embedded NIs and how they improve the performance and uniformity of memristors. It was found that embedding metal NIs can modulate electric field distribution, resulting in a more deterministic formation of conductive filaments (CFs) and enhancing the uniformity of operation voltages and current ON/OFF ratios.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Physics, Applied
Xinna Yu, Ke Chang, Anhua Dong, Zhikai Gan, Kang'an Jiang, Yibin Ling, Yiru Niu, Diyuan Zheng, Xinyuan Dong, Renzhi Wang, Yizhen Li, Zhuyikang Zhao, Peng Bao, Binbin Liu, Yuhong Cao, Su Hu, Hui Wang
Summary: In this study, molybdenum disulfide quantum dots were used to enhance the performance of resistive switching devices, resulting in lower switching voltages, uniform resistance states, improved endurance, and larger on/off ratios. The convergence of electric field distribution around the quantum dots is believed to enhance conductive filament formation, contributing to the optimization of device performance and furthering developments in data storage applications.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Jin Lei, Song Sun, Yuchen Li, Ping Xu, Chang Liu, Shaozhong Chang, Genglai Yang, Shuang Chen, Wei Fa, Di Wu, Ai-Dong Li
Summary: A resistive random-access memory based on a nanoporous zinc-based hydroquinone thin film was created with a Pt/ZnHQ/Ag sandwich structure. These devices exhibit electroforming-free bipolar resistive switching characteristic with lower operation voltages and higher on/off ratio above 10(2). The nanoporous hybrid devices also show multilevel storage capability and excellent endurance/retention properties. The connection and disconnection of Ag conductive filaments in the nanoporous Zn-HQ thin film follow the electrochemical metallization mechanism, which is facilitated by the existence of nanopores.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2023)
Article
Chemistry, Physical
Jin Lei, Song Sun, Yuchen Li, Ping Xu, Chang Liu, Shaozhong Chang, Genglai Yang, Shuang Chen, Wei Fa, Di Wu, Ai-Dong Li
Summary: Researchers have constructed an organic-inorganic hybrid resistive random-access memory using a nanoporous zinc-based hydroquinone (Zn-HQ) thin film. The Pt/Zn-HQ/Ag sandwich structure was used for the device. The nanoporous Zn-HQ thin film, fabricated through one-step molecular layer deposition, enables lower operation voltages, higher on/off ratio, multilevel storage capability, and excellent endurance/retention properties.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Mario Lanza, Felix Palumbo, Yuanyuan Shi, Fernando Aguirre, Santiago Boyeras, Bin Yuan, Eilam Yalon, Enrique Moreno, Tianru Wu, Juan B. Roldan
Summary: The threshold resistive switching in two-terminal metal/insulator/metal memristors using multilayer hexagonal boron nitride (h-BN) as dielectric is especially stable due to the low temperature in the h-BN stack during operation, contributing to the development of high-density nanoelectronics.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Nian He, Yanmei Sun, Qi Yuan, Yufei Wang, Shiyi Zuo
Summary: Three flexible transparent transient memristors based on degradable natural chitosan coating films were developed. These memristors exhibited different memory behaviors, including bipolar resistive switching and butterfly resistive switching accompanied by capacitance and negative resistance effect. The devices showed promising non-volatile memory characteristics in flexible memory applications, with large on/off ratio and long data retention time. The switching mechanism was evaluated using Schottky emission, hopping, and direct tunneling.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Liangliang Chen, Zhongyuan Ma, Kangmin Leng, Tong Chen, Hongsheng Hu, Yang Yang, Wei Li, Jun Xu, Ling Xu, Kunji Chen
Summary: In this study, we introduced a TiSbTe layer into an a-SiC0.11:H memristor and successfully observed the ultra-high uniformity of the TiSbTe/a-SiC0.11:H memristor device. The TiSbTe nanocrystal was beneficial for improving the uniformity of the device and enabled the implementation of various biosynaptic functions and simulation of visual learning capability.
Article
Chemistry, Multidisciplinary
Chunyu Du, Zhiyang Qu, Yanyun Ren, Yongbiao Zhai, Jiangming Chen, Lili Gao, Ye Zhou, Su-Ting Han
Summary: By utilizing a silver imidazole complex as the switching medium, limiting the migration range of silver ions, and reducing spatial and temporal variations, the RRAM exhibits enhanced performance with low operation voltage, making it suitable for building logic gates. The self-reduction and grain boundary confinement effect of switching materials may pave the way for large-scale circuit development in non-volatile computing and machine learning.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Jaewon Jang
Summary: This study investigates the impact of annealing time of the Y2O3 passivation layer on the electrical properties and bias stabilities of sol-gel-deposited SnO2 thin-film transistors (TFTs). Optimization of the Y2O3 passivation layer improves the field-effect mobility, subthreshold swing, and on/off-current ratio of the SnO2 TFTs. The annealing time also controls the thickness and oxygen-vacancy concentration in the SnO2 channel layer. A thin Y2O3 passivation layer effectively blocks external molecules and enhances the device performance. A 15 min-annealed Y2O3 passivation layer achieves maximum electrical performance and long-term stability.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Jeonggyu Yang, Hyundong Lee, Jae Hoon Jeong, Taehak Kim, Sin-Hyung Lee, Taigon Song
Summary: This paper discusses the design of ternary circuits based on memristors and MOSFETs, highlighting design issues and practical solutions, as well as introducing novel ternary logic cells and circuitry design.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2022)
Article
Materials Science, Multidisciplinary
Hea-Lim Park, Jongmin Jun, Min-Hoi Kim, Sin-Hyung Lee
Summary: Organic phototransistors are important components of multifunctional optoelectronics, and improving their photo-sensing performances and wavelength selectivity can be achieved by introducing helical photonic crystal insulators. The new structure effectively enhances the absorption of blue light and improves the device's performance in terms of photosensitivity, photoresponsivity, and wavelength selectivity.
ORGANIC ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Kyoungdu Kim, Changmin Lee, Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Jaewon Jang
Summary: The study focused on the impact of post-annealing temperature on the properties of Y2O3 films used in RRAM devices. It was found that Y2O3 films annealed at 500 degrees Celsius showed reduced oxygen vacancies and defect sites, decreased leakage current, increased resistance state ratio, and provided excellent nonvolatile memory properties.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Chemistry, Physical
So-Ra Min, Min-Su Cho, Sang-Ho Lee, Jin Park, Hee-Dae An, Geon-Uk Kim, Young-Jun Yoon, Jae-Hwa Seo, Jae-Won Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In-Man Kang
Summary: The self-heating effects on the electrical characteristics of GaN MOSFET with stacked TiO2/Si3N4 dual-layer insulator were investigated using TCAD simulations. The stacked TiO2/Si3N4 layers resulted in a higher temperature inside the device, leading to degradation in performance, such as a decrease in on-state current and cut-off frequency. Despite the degradation caused by SHEs, the stacked TiO2/Si3N4-based GaN MOSFET still exhibited better electrical performance compared to those with Si3N4 single-layer insulator.
Article
Chemistry, Multidisciplinary
Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Minsu Park, Kwangeun Kim, Jaewon Jang
Summary: Flexible near-infrared photodetectors were prepared using silver telluride nanoparticles and their crystal structure, chemistry, and optoelectronic properties were studied. The fabricated photodetectors achieved high detectivity under different strains. The proposed method for fabricating silver telluride thin films may have potential applications in other silver telluride-based devices.
Article
Engineering, Electrical & Electronic
Kyoungdu Kim, Hae-In Kim, Taehun Lee, Won-Yong Lee, Jin-Hyuk Bae, In Man Kang, Sin-Hyung Lee, Kwangeun Kim, Jaewon Jang
Summary: In this study, yttrium oxide (Y2O3)-based resistive random-access memory (RRAM) devices were fabricated using the sol-gel method. The thickness of the Y2O3 film was controlled by varying the concentration of the liquid-phase precursor, which also affected the concentration of oxygen vacancies. Thicker Y2O3 films with higher oxygen vacancy concentration showed conventional bipolar RRAM device characteristics, while thin films with lower oxygen vacancy concentration did not exhibit RRAM device properties.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Chemistry, Multidisciplinary
Hyeongwook Kim, Miseong Kim, Aejin Lee, Hea-Lim Park, Jaewon Jang, Jin-Hyuk Bae, In Man Kang, Eun-Sol Kim, Sin-Hyung Lee
Summary: In this study, a flexible artificial synapse with bio-realistic synaptic plasticity is developed using organic memristors that have systematically engineered metal-ion injections for the first time. The developed synapse arrays demonstrate stable capabilities for complex combinatorial optimization under spike-dependent operations. This effective concept is an essential building block for achieving a new paradigm of wearable smart electronics associated with artificial intelligent systems.
Article
Engineering, Electrical & Electronic
Taehun Lee, Kyoungdu Kim, Hae-In Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jaewon Jang
Summary: This study investigates SnO2 thin-film transistors (TFTs) fabricated with vertically controlled carrier concentrations using a sol-gel method. The proposed fabrication method utilizes thin Al layers to control carrier concentrations, which are converted into Al2O3 islands on the SnO2 surfaces after annealing. This morphology significantly reduces bias stress instability and exhibits improved negative bias stability.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Hyeongwook Kim, Jihwan Lee, Hyun Wook Kim, Jiyong Woo, Min-Hwi Kim, Sin-Hyung Lee
Summary: This study demonstrates an effective strategy for localizing conductive filament (CF) distributions in memristors by suppressing charge injection. By reducing the injected charge, narrower CF distributions can be achieved, resulting in more reproducible and stable resistive switching characteristics.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Biochemistry & Molecular Biology
Jinuk Lee, Jun-Ik Park, Sin-Hyung Lee, Jaewon Jang, In-Man Kang, Jaehoon Park, Xue Zhang, Do-Kyung Kim, Jin-Hyuk Bae
Summary: In this study, a technique called selective photo-oxidation (SPO) is proposed for self-patterning and sensitivity adjustment of ultrathin stretchable strain sensors. SPO allows precise tuning of surface energy and elastic modulus by irradiating an elastic substrate with controlled ultraviolet treatment. SPO induces hydrophilization of the substrate, enabling self-patterning of silver nanowires (AgNWs), and promotes the formation of nonpermanent microcracks in AgNWs/elastomer nanocomposites, thereby improving sensor sensitivity. This technique enables the fabrication of reliable and sensitivity-controlled strain sensors that can detect small and large movements of the human hand.
Article
Automation & Control Systems
Sungjun Oh, Hyungjin Kim, Seong Eun Kim, Min-Hwi Kim, Hea-Lim Park, Sin-Hyung Lee
Summary: Organic memristors show promise as flexible synaptic components for wearable intelligent systems. Efforts have been made to develop organic transient memristors for eco-friendly flexible neural networks. However, achieving flexible memristors with biorealistic synaptic plasticity for energy efficient learning processes in transient neural networks is still challenging.
ADVANCED INTELLIGENT SYSTEMS
(2023)
Article
Chemistry, Multidisciplinary
Uihoon Jung, Miseong Kim, Jaewon Jang, Jin-Hyuk Bae, In Man Kang, Sin-Hyung Lee
Summary: In this study, flexible neuromorphic systems for complex computations are implemented using organic memristors with bio-mimetic synaptic weights. The cluster-structured filaments achieved by optimizing the polymer conductivity lead to continuous memory states. The systems showed stable computing performances including ternary logic operators and noisy image recognition systems.
Article
Materials Science, Multidisciplinary
Hye-Min An, Hyowon Jang, Hyeok Kim, Sin-Doo Lee, Sin-Hyung Lee, Hea-Lim Park
Summary: This paper proposes a promising strategy to precisely engineer the current path of vertical-type organic phototransistors (VOPTs) by introducing a charge blocking layer (CBL). The developed VOPT with CBL demonstrates significantly enhanced on/off current ratio and photosensitivity compared to typical devices. This novel concept of using VOPTs as superior photosensor and photomemory has high potential for the advancement of next-generation optoelectronics in Internet-of-Things systems.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Automation & Control Systems
Seong Eun Kim, Min-Hwi Kim, Jisu Jang, Hyungjin Kim, Sungjun Kim, Jaewon Jang, Jin-Hyuk Bae, In Man Kang, Sin-Hyung Lee
Summary: This article demonstrates a novel strategy for constructing a highly integrated 1S-1R synapse array through systematically engineering ion injection. The developed synapse exhibits reliable parallel computation and high energy efficiency, making it a promising building block for practical artificial intelligence.
ADVANCED INTELLIGENT SYSTEMS
(2022)
