Article
Nanoscience & Nanotechnology
Xuelian Zhang, Haohan Chen, Siqi Cheng, Feng Guo, Wenjing Jie, Jianhua Hao
Summary: This study investigates the resistive switching characteristics, synaptic functions, and neuromorphic computing of memristors based on two-dimensional MXene Ti3C2 nanosheets. The results show that both digital and analog resistive switching behaviors can coexist in these memristors depending on the magnitude of operation voltage. Additionally, the artificial synapses based on these memristors exhibit basic synaptic functions and successfully emulate the learning-forgetting experience. Moreover, the artificial synapses can be used to construct an artificial neural network for image recognition.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Physical
Li Zhang, Zhenhua Tang, Junlin Fang, Xiujuan Jiang, Yan-Ping Jiang, Qi-Jun Sun, Jing-Min Fan, Xin-Gui Tang, Gaokuo Zhong
Summary: Artificial neural network-based computing has the potential to overcome the limitations of conventional computers and has a wide range of applications. By using NiO/Cu2O memristors to emulate biological synapses, the recognition accuracy of an artificial neural network based on synaptic weight modulation reached up to 96.84% on average, demonstrating the potential of artificial synapses in artificial intelligence systems.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Physical
Min-Kyu Song, Seok Daniel Namgung, Hojung Lee, Jeong Hyun Yoon, Young-Woong Song, Kang Hee Cho, Yoon-Sik Lee, Jong-Seok Lee, Ki Tae Nam, Jang-Yeon Kwon
Summary: This study investigates the gradual switching phenomenon in peptide-based memristors under high proton conductivity. The unexpected high slope value in the log/-V curve at low voltage leads to significantly increased accuracy of image recognition.
Article
Chemistry, Physical
Sola Moon, Kitae Park, Peter Hayoung Chung, Dwipak Prasad Sahu, Tae-Sik Yoon
Summary: Synaptic characteristics with tunable dependence on the voltage polarity are demonstrated in ceria (CeO2) and Gd-doped ceria (GDC) bilayer memristors with respect to their stacking orders. These memristors exhibit analog, linear, and symmetric synaptic weights for potentiation and depression, paired-pulse facilitation, and short- and long-term plasticity (STP and LTP, respectively). The recognition simulation with modified handwritten digits patterns using a two-layer perceptron neural network demonstrates the potential of bilayer memristors for application in artificial synapse networks.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Nanoscience & Nanotechnology
Litty Thomas Manamel, Swetha Chengala Madam, Srikrishna Sagar, Bikas C. Das
Summary: This study presents robust and highly reproducible nonvolatile resistive switching devices utilizing redox-exfoliated few-layered 2H-MoS2 nanoflakes. The advantageous polar solvent compatibility of 2D MoS2 enables easy and cost-effective fabrication of thin film devices using polystyrene as matrix. The devices exhibit prominent resistive switching properties and electroforming-free operation, favoring resistive random-access memory (ReRAM) application.
Article
Engineering, Electrical & Electronic
Dilruba Hasina, Mohit Kumar, Ranveer Singh, Safiul Alam Mollick, Anirban Mitra, Sanjeev Kumar Srivastava, Minh Anh Luong, Tapobrata Som
Summary: The study demonstrates an effective method for tuning defect density and resistive switching behavior in TiOx layers using low energy argon ion implantation, achieving adjustable nanoscale resistive switching property. The findings are attributed to ion-beam induced controlled defect engineering and show a strong similarity with biological synapses in terms of learning ability with electric stimuli.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Prabana Jetty, Dwipak Prasad Sahu, Suryanarayana Jammalamadaka
Summary: The study demonstrates the analog switching characteristics of bio-RRAM devices based on chitosan and RGO+chitosan, as well as the stability and conduction channel mechanism in these devices. Additionally, synaptic learning rules such as long-term potentiation (LTP) on Ag/RGO+chitosan/FTO-based device were shown, indicating the potential of this synaptic bio-RRAM device in future neuromorphic computing applications.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2022)
Review
Computer Science, Information Systems
Bonan Yan, Yuchao Yang, Ru Huang
Summary: This paper reviews the latest advances in novel types of memristors and their applications in bio-inspired computing systems and sensory systems. The paper also discusses device-circuit co-optimization methods and offers insights into the research trends of memristive materials and devices.
SCIENCE CHINA-INFORMATION SCIENCES
(2023)
Article
Materials Science, Ceramics
Muhammad Ismail, Haider Abbas, Andrey Sokolov, Chandreswar Mahata, Changhwan Choi, Sungjun Kim
Summary: By introducing an amorphous Ta2O5 layer into the ZrO2 memristor, significant improvements in resistive switching and synaptic characteristics were achieved, leading to multilevel storage capability and effective mimicry of biological synaptic learning patterns.
CERAMICS INTERNATIONAL
(2021)
Review
Materials Science, Multidisciplinary
Hui Chen, Huilin Li, Ting Ma, Shuangshuang Han, Qiuping Zhao
Summary: As the boom of data storage and processing, brain-inspired computing provides an effective approach to solve the current problem. Various emerging materials and devices have been reported to promote the development of neuromorphic computing. Herein, we mainly review the progress of these brain functions mimicked by neuromorphic devices, concentrating on synapse, neurons, and intelligent behaviors, and present some challenges and prospects related to neuromorphic devices.
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
(2023)
Article
Chemistry, Physical
Feifei Luo, Yanzhao Wu, Junwei Tong, Gaowu Qin, Xianmin Zhang
Summary: Two-dimensional Cs3Bi2I6Cl3 perovskite films were successfully grown on ITO glass substrates to fabricate a memory device. The device exhibited bipolar resistive switching behaviors and demonstrated excellent stability. It also simulated the short-term and long-term plasticity of biological synapse and showed associative learning behavior.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Chemistry, Physical
Feifei Luo, Yanzhao Wu, Junwei Tong, Fubo Tian, Xianmin Zhang
Summary: Zero-dimensional (0D)-Cs3Bi2I9, two-dimensional (2D)-Cs3Bi2Br9, and one-dimensional (1D)-Cs3Bi2Cl9 perovskite films were fabricated on ITO glass substrates to create memristors. The memristors exhibited bipolar resistive switching behaviors and demonstrated excellent stability. The 0D-Cs3Bi2I9 device had a significantly higher ON/OFF ratio compared to the 1D-Cs3Bi2Cl9 device and the 2D-Cs3Bi2Br9 device. The dimensionality of the perovskite films affected the formation and rupture of conductive filaments. Moreover, the devices showed long-term plasticity and successfully simulated associative learning behavior.
Article
Chemistry, Physical
Muhammad Ismail, Chandreswar Mahata, Sungjun Kim
Summary: The study demonstrated well-regulated multilevel resistive switching (RS) and neuromorphic characteristics in memristors prepared using atomic layer deposition (ALD), showing excellent control over resistance states and potential applications in bionic electronics.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Physics, Multidisciplinary
Wen Xin-Yu, Wang Ya-Sai, He Yu-Hui, Miao Xiang-Shui
Summary: With the rapid development of deep learning, the current need for hardware computing power has increased. Traditional CMOS integration is unable to meet the growing demands, leading to the utilization of new device structures such as memristors. This article reviews the device structure and physical mechanism of mainstream memristors, explores their performance characteristics and recent research progress in realizing artificial neurons and synapses. It also reviews the structural forms and applications of passive and active memristive arrays in neuromorphic computing, and summarizes the challenges and future development prospects in this field.
ACTA PHYSICA SINICA
(2022)
Article
Chemistry, Physical
Jing Xu, Hongjun Wang, Yuanyuan Zhu, Yong Liu, Zhaorui Zou, Guoqiang Li, Rui Xiong
Summary: By controlling the oxygen vacancy concentration in the Nb2O5 switching layer, the resistive switching behavior in Cu/Nb2O5/Pt memory devices can be adjusted, leading to a gradual transition in the reset and set processes.
APPLIED SURFACE SCIENCE
(2022)