Journal
PHYSICAL REVIEW MATERIALS
Volume 3, Issue 4, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.3.044409
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Funding
- National Science Foundation through the Designing Materials to Revolutionize and Engineer our Future (DMREF) program [DMR-1629270]
- National Science Foundation through the Energy-Efficient Computing: from Devices to Architectures (E2CDA) program [ECCS-1740136]
- Semiconductor Research Corporation through the nanoelectronic COmputing REsearch (nCORE) program
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The anomalous Hall effect (AHE) is a well-known fundamental property of ferromagnetic metals, commonly associated with the presence of a net magnetization. Recently, an AHE has been discovered in noncollinear antiferromagnetic (AFM) metals. Driven by nonvanishing Berry curvature of AFM materials with certain magnetic space-group symmetry, anomalous Hall conductivity (AHC) is very sensitive to the specific type of magnetic ordering. Here, we investigate the appearance of AHC in antiperovskite materials family ANMn(3) (A = Ga, Sn, Ni), where different types of noncollinear magnetic ordering can emerge. Using symmetry analyses and first-principles density-functional theory calculations, we show that with almost identical band structure the nearly degenerate noncollinear AFM Gamma(5g) and Gamma(4g) phases of GaNMn3 have zero and finite AHC, respectively. In a noncollinear ferrimagnetic M-1 phase, GaNMn3 exhibits a large AHC due to the presence of a sizable net magnetic moment. In the noncollinear antiperovskite magnets, transitions between different magnetic phases, exhibiting different AHC states, can be produced by doping, strain, or spin transfer torque, which makes these materials promising for novel spintronic applications.
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